PEx3SP05

# PEx3SP05 - ECE3040B Practice EXAM 3 Dr S.C Shen ECE3040B...

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4/15/2005 ECE3040B Practice EXAM 3 © Dr. S.C. Shen Georgia Institute of Technology School of ECE 2 DATA AND EQUATION SHEET Constants: kT (300K) = 0.026 eV k = 1.38x10 - 23 J/K h = 4.14x10 -15 eV-sec q = 1.6x10 -19 C m o = 9.11x10 -31 kg k = 8.62x10 -5 eV/K E (eV) = 1.24/ λ (μm) ε o =8.85 x10 -12 F/m Material Parameters at 300K Semiconductor Lattice Constant (Å) Bandgap (eV) Band Dielectric Constant Ge 5.64 0.66 Indirect 16.0 Si 5.43 1.12 Indirect 11.9 GaAs 5.63 1.42 Direct 13.1 GaP 5.45 2.26 Indirect 11.1 InP 5.86 1.35 Direct 12.4 ZnS 5.42 3.68 Direct 5.2 n i (Ge, 300K) = 2.5 x 10 13 cm -3 n i (Si, 300K) = 1.05 x 10 10 cm -3 n i (GaAs, 300K)= 2 x 10 6 cm -3 Silicon DOS effective mass : m n /m o =1.18, m p /m o =0.81 GaAs DOS effective mass : m n /m o =0.067, m p /m o =0.52 MOS Capacitor : T G V V inversion, strong of onset the at tor semiconduc type - n a for tor semiconduc type - p a for = = = F S i D i A F n N q kT n N q
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PEx3SP05 - ECE3040B Practice EXAM 3 Dr S.C Shen ECE3040B...

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