MCD_2E_Answers - MICROELECTRONIC CIRCUIT DESIGN Second...

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Unformatted text preview: MICROELECTRONIC CIRCUIT DESIGN Second Edition Richard C. Jaeger and Travis N. Blalock Answers to Selected Problems (Updated versions of this file may be available at http://www.jaegerblalock.com ) Chapter 1 1.3 1.52 years, 5.06 years 1.5 2.00 years, 6.65 years 1.8 113 MW, 511 kA 1.10 2.44 mV, 5.71 V 1.12 19.53 mV/bit, 100011102 1.16 0.002 A, 0.002 cos (1000t) A 1.19 [5 + 2 sin (2500t) + 4 sin (1000t)] V 1.21 14.7 V, 3.30 V, 76.7 mA, 300 mA 1.23 150 mA, 100 mA, 8.20 V 1.25 40 W , 0.025 vs 1.27 56 kW , 1.07 x 10-3 vs 1.29 1.00 MW , 2.00 ¥ 108 is 1.33 5/- 45°, 100/- 12° 1.35 -90.1 sin 750pt mV, 11.0 sin 750pt mA 1.37 1 + R2/R1 1.39 -1.875 V, -2.500 V 1.41 Band-pass amplifier 1.43 25.0 sin (2000pt) + 15.0 cos (8000 pt) V 1.45 0V 1.47 [1980W , 2020W ], [1900W , 2100W ], [1800W , 2200W ] 1.52 6200W , 800 ppm/oC 1.58 3.29, 0.995, -6.16; 3.295, 0.9952, -6.155 Chapter 2 2.4 For Ge: 35.9/ cm3 , 2.27 ¥ 101 3/ cm3 , 8.04 ¥ 101 5/ cm3 2.7 2.13 ¥ 106 cm /s, 7.80 ¥ 105 cm/s, 3.41 ¥ 104 A / cm2 , 1.25 ¥ 10 - 1 0A / cm2 2.8 305.2 K 2.10 -5 ¥ 10 4 cm/s 2.13 1.60 x 106 A/cm2, 0.800 A 2.15 316.6 K 2.19 Acceptor, donor 2.20 100 V/cm 2.22 5 x 104 atoms 2.24 3.00 ¥ 101 6/ cm3 , 3.33 ¥ 105 /cm3 2.28 2 x 1017/cm3, 500/cm3, 2 x 1017/cm3, 0.0227/cm3 2.30 3 x 1017/cm3, 333/cm3 2.32 102 /cm3 , 101 8 /cm3 , 350cm2 / V ⋅ s, 150cm2 / V ⋅ s, 0.042 W ⋅ cm, p-type 2.34 101 6 /cm3 , 104 / cm3 , 710cm2 / V ⋅ s, 260cm2 / V ⋅ s, 2.40 W ⋅ cm, p-type 2.38 2.5 ¥ 101 5 /cm3 2.40 Yes—add equal amounts of donor and acceptor impurities. Then n = ni = p, but the mobilities are reduced. See Prob. 2.26. 2.42 1 .4 ¥ 101 7 /cm3 2.44 6.64 mV, 12.9 mV, 25.9 mV 2.46 - 12.0 ¥ 103 exp( -5000x ) A / cm2 ; -1.20 mA 2.48 (b) -553 A / cm2 , - 603 A / cm2 , + 20 A /cm2 , - 7 A /cm2 , +46.7 A / cm2 , -638 A/cm2 2.50 1.108 mm Chapter 3 3.1 101 8 /cm2 , 102 /cm3 , 101 5 /cm3 , 105 / cm3 , 0.748 V, 0.984 mm 3.3 0.806 V, 1.02 m m, 1.02 m m, 1 .02 ¥ 10- 4 mm , 15.8 kV/cm 3.6 1.80 V, 3.06 mm 3.10 1600 A/cm2 3.13 5 x 1020/cm4 3.17 290 K 3.20 312K 3.21 1.39, 3.17 pA 3.22 0.748 V; 0.691 V; 0 A; - 0.909 ¥ 10- 1 7 A ; - 1.00 ¥ 10- 1 7 A 3.25 1.35 V; 1.38 V 3.28 0.518 V; 0.633 V 3.31 0.757 V; 0.721 V 2 3.34 -1.96 mV/K 3.37 0.576 V, 2.74 m m, 11.7 m m, 36.2 m m 3.39 374 V 3.41 4 V, 0 W 3.43 9.80 nF/cm2; 37.6 pF 3.45 400 fF, 10 fC; 100 pF, 2.5 pC 3.49 13.9 MHz; 21.9 MHz 3.51 0.495 V, 0.725 V 3.53 0.708 V, 0.718 V 3.56 Load line: (450 mA, 0.500 V); SPICE: (443 mA, 0.575 V) 3.59 (0.600 mA, -4 V) 3.65 Load line: (51mA, 0.49 V); Mathematical model: (49.93mA, 0.5007 V); Ideal diode model: (100 mA, 0 V); CVD model: (40.0mA, 0.600 V) 3.69 (a) (0.500 mA, 0 V); (0.465 mA, 0.700 V) 3.71 (a) (-6.67 V, 0 A), (0 V, 1.67 mA); (-6.15 V, 0 A), (0.75 V, 1.62 mA) 3.73 (a) (1.00 mA, 0 V) (0 mA, -2 V) (1.00 mA, 0) (d) (0 A, -0.667 V) (0 mA, -1.33 V) (0.567 mA, 0 V) 3.76 (1.50 mA, 0 V) (0 A, -5 V) (1.00 mA, 0) 3.78 (IZ, V Z) = (343mA, 4.00 V) 3.81 12.6 mW 3.83 0.501 W, 3.50 W 3.88 0.975 (VP - V on) 3.91 -7.91 V; 1.05 F; 17.8 V; 3530 A; 841 A (DT = 0.628 ms) 3.94 -7.91V, 0.158 F, 17.8 V, 3540 A, 839 A 3.97 3.33 F; 12 V; 4.24 V; 1540 A; 7530 A 3.100 7.91 V; 0.527 F; 16.8 V; 210 A; 1770 A 3.103 417 mF, 2000 V, 1414 V, 0.375 ms, 314 A 3.107 417 mF; 4000 V; 1410 V; 44.4 A; 314 A 3.114 d = 2/3; C = 74.1 m F Æ 82 m F; L = 1.48 mH Æ 1.5 mH 3.117 VO = 3.118 h= VS - Vo n ; 6.75 V; 37.5 mV; 44.4 mA 1- d 100% 1 + (1 - d ) h= 3.121 Vo n VS ; 96.4%; 100% V V 1 + (1 - d ) o nD + d o nS VS VS d = 0.300; C = 2.08 m F Æ 2.2 m F; L = 7.00 mH Æ 6.8 mH 3 3.124 VO = V Sd - V on(1 - d); 4.63 V; 116 mV; 46.3 mA; slightly reduced output voltage, <50 percent of ripple voltage and current 3.137 Slopes: 0, +0.5, 0.667; breakpoints: -2 V, 0 V 3.140 Slopes: +0.25, +0.5, +0.25, 0; breakpoints: 0 V, 2 V, 4 V 3.142 5 mA, 4.4 mA, 3.6 mA, 8.6 ns 3.146 (0.969 A, 0.777 V); 0.753 W; 1 A, 0.864 V 3.148 1.11 mm, 0.875 mm; far infrared, near infrared Chapter 4 4.3 10.5 x 10-9 F/cm2 4.4 34.5 mA/V2, 86.3 mA/V2, 173 mA/V2, 345 mA/V2 4.8 (a) 4.00 mA/V2 (b) 4.00 mA/V2, 8.00 mA/V2 4.11 208 mA; -218 mA 4.15 93.0 W ; 148 W 4.18 450 mA/V2 4.20 13.6 A/V2 4.22 125 mA / V2 ; 1.5 V; enhancement mode; 5/1 4.26 57.5 mA, linear region; 195 mA, saturation region; 0 A, cutoff 4.27 saturation; cutoff; saturation; linear; linear; saturation 4.34 1.72 mA; 1.56 mA 4.37 2.26 mA, 4.52 mA, 2.48 mA 4.38 6.00 mA; 6.00 mA (our linear region model does not contain l) 4.41 97.9 mA; 98.1 mA 4.44 31.5 mA; 28.8 mA 4.46 4.85 V 4.48 13.8 mA / V2 ; 34.5 mA / V2 ; 69.0 mA / V2 , 138 mA/V2 4.51 5.00 mA; 9100 mA; 0.550 mA; 4.10 mA 4.54 235 W ; 94.1 W ; 250/1 4.57 0.629 A/V2 4.60 0.360 mA 4.62 VTN > 0; depletion mode; no 4.71 1 .73 ¥ 10 -7 F/ cm2 ; 4.32 fF 4.74 8.63 nF 4.81 (1.12 mA, 1.75 V); linear region 4.84 (70.2 mA, 9.47 V) 4.86 (42.3 mA, 9.00 V) 4.91 134 mA; 116 mA 4 4.94 510 kW , 470 kW , 12 kW , 12 kW 20/1 4.97 (124 mA, 2.36 V) 4.100 (32.5 mA, 1.26 V) 4.103 (23.0 mA, 1.12 V) 4.107 (58.3 mA, 9.20 V) 4.111 (227 mA, 3.18 V) 4.112 4.52 mA; 10.8 mA 4.114 (9/10) = 1.11/1 4.116 (a) (124 mA, 5.70 V) (b) (182 mA, 1.34 V) 4.118 4.04 V, 2.71 mA, 10.8 mA 4.119 3.61 mA; 6.77 mA; 2.61 mA 4.121 (59.8 mA, 6.03 V), 138 kW 4.126 (a) (98.4 mA, 2.15 V) 4.130 341 kW 4.133 (200 mA, 13 V) 4.137 (36.3 mA, 12.9 mV); (31.7 mA, 1.54 V); (28.2 mA, 2.69 V) 4.140 44.3 kW , V ≥ 5 V 4.143 1.52 V, 0.77 V 4.149 34.5 fF, 17.3 fF 4.154 (500 mA, 5.00 V); (79.9 mA, 0.250 V); (159 mA, 3.70 V) 4.156 2.50 kW ; 10.0 kW 4.157 0.5 mA, 0, 1.17 V; 1.38 mA, 0.62 mA, -0.7 V 4.160 (69.5 mA, 3.52 V); (131 mA, 3.52 V) 4.162 (69.5 mA, 5.05 V); (456 mA, 6.20 V)) Chapter 5 5.4 0.0167, 0.667, 3.00, 0.909, 49.0, 0.9950, 0.9990, 5000 5.5 2 fA; 1.01 fA, -0.115 V 5.9 2.02 fA 5.11 1.07 mA; -1.07 mA 5.14 0.599 V 5.17 0.606 V 5.20 723 mA 5.20 723 mA 5.28 979 mA, 930 mA, 48.9 mA 5.35 saturation, forward-active region, reverse-active region, cutoff 5.39 83.3, 87.5, 100 5 5.46 21.5 mV, 25.8 mV, 30.2 mV 5.48 2.31 mA; 388 mA; 0 5.52 12 fF; 1.2 pF; 120 pF 5.54 600 MHz, 3 MHz 5.56 0.282 mm 5.59 IC = 16.3 pA, IE = 17.1 pA, IB = 0.857 pA, forward-active region; although IC, IE , IB are all very small, the Transport model still yields IC @ b F IB 5.61 50, 1.73 fA 5.63 6.25 MHz 5.65 0.500, 17.3 aA 5.67 -23.7 mA, +31.6 mA, -55.3 mA 5.69 vECSAT is identical to Eq. (5.46) 5.73 0.812 V, 0.730 V 5.75 71.7, 43.1 V 5.77 100 mA, 4.52 mA, 95.5 mA, 0.589 V, 0.593 V, 0.592 V; 2.19 mA, 0.100 mA, 2.09 mA, 0.666 V, 0.666 V 5.82 (80.9 mA, 3.80 V); (404 mA, 3.80 V) 5.86 (42.2 mA, 4.39 V) 5.92 (7.8 mA, 4.1 V) 5.94 (5.0 mA, 1.3 V) 5.96 56 kW (or 62 kW ), 1.5 MW ; 12.4 m A, 0.799 V 5.100 101 mA, 98.4 mA 5.107 5.24 V 5.109 3.21 W 5.112 60.7 mA, 86.0 mA, 4.00 V, 5.95 V 5.116 4.4 percent; 70 percent 5.118 4.74 mA, 9.71 mA, 1.28 V, 3.73 V Chapter 6 6.1 10 mW/gate, 2 mA 6.3 5 V, 0 V, 0 W, 0.25 mW; 3.3 V, 0 V, 0 V, 0.11 mW 6.5 VOL = 0 V, V OH = 3.3 V, V REF = 1.1 V; Z = A 6.7 3 V, 0 V, 2 V, 1 V, - 3 6.9 2 V, 2 V, 3 V, 2 V 6.11 3.3 V, 0 V, 1.8 V, 1.5 V, 1.5 V, 1.5 V 6.13 -0.78 V, -1.36 V 6.15 1 ns 6.17 5 mW, 1.52 mA, 5 fJ 6 6.19 2.20 RC; 2.20 R C 6.21 - 0.78 V, - 1.36 V, 0.5 ns, 0.5 ns, 8 ns, 9 ns, 4 ns, 4 ns 6.24 Z=00010011 6.26 Z=01010101 6.29 2; 1 6.31 Z = AB; Z = A + B 6.33 16.2 6.35 Y = ABC 6.37 VREF = 2.8 V 6.41 0.583 pF 6.44 20 mW/gate, 4 mA/gate 6.49 0.984 V, 3.13 V 6.53 40.3 kW ; 4.90/1; 1.47 V, 0.653 V 6.56 1000 W; 2500 W; a resistive channel exists connecting the source and drain; 20/1 6.59 1.83 V 6.62 0.774 V, 0.610 V 6.66 3.74/1, 1/1.41 6.69 0.190 V 6.71 ratioed logic so VOH = 3.39 V, V OL = 0.25 V; P = 0.18 mW 6.77 6.80 V 6.81 1.89 6.83 4.90/1, 1/1.41, 0.777 V, 1.36 V 6.85 2.33/1, 1/1.55 6.90 3.53/1, 1/3.39 6.94 Y = ( A + B)(C + D)( E + F ) , 6.18/1, 1/2.15 6.98 Y = ACE + ACDF + BF + BDE , 1.40/1, 24.7/1, 16.5/1 6.101 1/4.30, 3.09/1 6.104 Y = ( C + E)[ A( B + D) + G ] + F ; 1/1.08, 4.12/1, 6.18/1, 12.4/1 † 6.107 3.15/1, 6.06/1, 6.24/1, 6.42/1 6.110. +5 V, 0.163 V 6.113 1.85/1, 8.24/1, 12.4/1, 24.8/1 6.118 I D S = 2I DS , PD = 2PD ¢ ¢ 6.121 1 ns 6.123 60.2 ns, a potentially stable state exists with no oscillation 6.124 105 ns, 6.23 ns, 17.9 ns 6.128 192 ns, 4.44 ns, 11.8 ns 6.136 2.63/1, 25.3/1, 13.6 ns, 2.07 ns 7 6.142 (a) 1/3.39 (d) 1/9.20 (f) 1/2.25 6.146 -4.00 V, -0.300 V 6.148 1.28/1, 7.09/1 6.150 1.61 V, 4.68 V 6.152 Y = A+B Chapter 7 7.1 27.7 mA / V2 ; 11.1 mA / V2 7.3 250 pA; 450 pA; 450 pA 7.6 3.3 V, 0 V 7.8 cut off, triode, triode, triode, saturation, saturation 7.11 2.5 V; 2.16 V 7.13 2.1628 V, 2.16 V 7.15 27.0/1, 1/1.17 7.17 2.57 V, 1.70 V; 1.69 V, 1.17 V 7.21 1.61 ns, 3.22 ns 7.23 2.18 ns, 4.36 ns 7.25 4.33/1, 10.8/1 7.27 7.11/1, 17.8/1 7.29 2.2 ns, 2.3 ns, 1.2 ns, 1.1 ns, C = 177 fF 7.31 2 mW/gate, 16.0 fF, 36.7 fF 7.34 4 W; 1.74 W 7.36 22.6 mA; 2.25 mA 7.41 aD T, a 2P, a 3PDP 7.46 5/1, 8/1; 15/1, 24/1 7.50 3.2/1, 2/1 7.56 8.13 ns, 8.13 ns, 8.13 ns 7.57 (a) 5 transistors 7.59 Y = ( A + B)(C + D) E = ACE + ADE + BDE + BCE, 15/1, 18/1, 30/1 7.61 4/1, 15/1 7.63 4/1, 6/1, 10/1 7.65 20/1, 24/1, 40/1 7.72 11 1 ns, 2.6 ns 7.74 19.5 ns, 48.8 ns 7.79 VDD Æ 2 1 2VIH 2VIH VDD Æ VDD ; R ≥ = , C1 ≥ 2.88C2 3 2 VDD - VIH NM H 8 7.85 N = 6, A = 462 Ao 7.87 500 W , 1250 W 7.89 ª 160/1 7.94 N ML = VDD + 3VTN + VTP 4 | N MH = VDD - VTN - 3VTP 4 † Chapter 8 8.1. 268,435,456 ; 1,073,741,824 8.2. 3.73 pA 8.5 2.67 mV 8.10. “1” level is discharged by junction leakage current 8.12. -19.8 mV; 2.48 V 8.16. 1.60 V, +5.00 V; -1.83 V 8.18 58.5 mW 8.21. 361 mA, 1.85 W 8.23. 0.266 V 8.24. 0.95 V 8.31. 11,304; 11,304 8.35. VDD Æ 8.37. W3 = 001010112 8.42. 1.16/1 2 1 2VIH 2VIH V Æ VDD ; R ≥ = 3 DD 2 VDD - VIH NM H Chapter 9 9.1 1.38 V, 1.12 9.3 -1.75 V, 0 V 9.5 -1.0 V, -1.4 V, -1.2 V, 132 mV, 10.4 mW 9.9 -0.700 V, -1.70 V, -1.20 V, 1.00 V 9.11 - 0.700 V, - 1.50 V, - 1.10 V, 2.67 kW ; 0.314 V, - 0.100 V, + 0.300 V 9.12 53.3 mA 9.15 4.20 kW , 1.17 kW , 200 W , 185 W 9.17 0.324 V 9.21 0.340 V 9.23 50.0 mA, -2.30 V 9.25 9.25 kW , 10.0 kW , 58.5 kW , 210 kW 9.28 + 0.600 V, - 0.560 V, 314 W 9.31 5.15 mA 9 9.34 0.13 mA 9.38 500 W , 60.0 mA 9.40 (c) 0 V, -0.7 V, 3.93 mA (d) –3.7 V, 0.982 mA (e) 2920 W 9.43 Y = A+ B 9.47 -0.892 V; -1.14 V 9.51 -1.00 V; -0.974 V; -0.948 V; -0.922 V † 9.55 23.2 mA 9.57 -0.850 V; 3.59 pJ 9.59 0 V, - 0.600 V, 5.67 mW; Y = A + B + C , Y = A + B + C , 5 vs. 6 9.62 5.00 kW , 5.40 kW , 31.6 kW , 113 kW 9.65 2.23 kW , 4.84 kW , 120 kW 9.67 2.98 pA, 74.5 fA 9.69 160; 0.976; 5; 0.773 V 9.70 0.691 V, 0.710 V 9.75 40.2 mV, 0.617 mV 9.77 3 V, 0.15 V, 0.66 V, 0.80 V, 33 9.79 0.682 V, 2.47 mA 9.83 44.8 kW , 22.4 kW 9.85 5 V, 0.15 V, 0; -1.06 mA, 31; -1.06 mA vs. -1.01 mA, 0 mA vs. 0.2 mA 9.93 8 9.95 234 mA, 34.9 mA 9.99 (IB , IC): (a) (135 mA, -169mA); (515mA, 0); (169 mA, 506 mA); (0, 0) (b) all 0 except IB1 = IE1 = 203 mA 9.105 1.85 V, 0.15 V; 62.5 mA, -650 mA; 13 9.107 Y = ABC ; 1.9 V; 0.15 V; 0, -408 mA 9.109 1.5 V, 0.25 V; 0, -1.00 mA; 16 9.111 963 mA, 963 mA, 0 9.116 (IB , IC): (532mA, 0); (0, 0); (0, 0); (3.75 mA, 150 mA) 9.120 Y = A + B + C ; 0 V, - 1.0 V; - 0.90 V 9.121 Y = A + B + C ; 0 V, - 0.80 V; - 0.40 V Chapter 10 10.3 Using MATLAB: t = linspace(0,.004); vs = sin(1000*pi*t)+0.333*sin(3000*pi*t)+0.200*sin(5000*pi*t); vo= 2*sin(1000*pi*t+pi/6)+sin(3000*pi*t+pi/6)+sin(5000*pi*t+pi/6); plot(t,vs,t,vo)par 500 Hz: 1 0°, 1500 Hz: 0.333 0°, 2500 Hz: 0.200 0°; 2 30°, 1 30°, 1 30° 2 30°, 3 30°, 5 30° yes 10 10.5 35.0 dB, 111 dB, 73.2 dB 10.8 12.7, 2.00 x 105, 1.59 x 104 10.12 -10 (20 dB), 0.1 V 10.14 8 -sin (1000t); there are only two components; dc: 8 V, 159 Hz: -4 V Ê g1 1g2 2 ˆ Á g1 2 - g ˜ Ë 21 ¯ -1 Ê g ggˆ Æ - 2 1 ; Á g2 2 - 2 1 1 2 ˜ g1 1g2 2 Ë g1 1 ¯ -1 Æ 1 ; g2 2 10.17 11.2% 10.21 10 kW , 1, - 101, 4.17 m S 10.23 24.3 MW , 240 kW , 24.2 MW , 240 kW 10.26 102 kW , 0.0164, 98.3, 16.4 m S 10.28 3.50 kW , 1.00 kW , - 6.00 MW , 61.0 kW 10.30 1 mS, - 1, 2001, 20 kW 10.32 0.101 S, 50.0 m S, - 0.100 S, 50.0 m S 10.35 y1 1 - 10.37 Ê g1 2g2 1 ˆ Á g1 1 - g ˜ Ë 22 ¯ 10.41 45.3 mV; 1.00 W 10.45 -8180 10.47 0, • , 125 mW, • 10.50 -3.52 dB, 23.9 kHz 10.54 -0.828 dB, 145 Hz 10.57 60 dB, 10 kHz, 10 Hz, 9.99 kHz, band-pass amplifier 10.59 80 dB, •, 50 Hz, •, high-pass amplifier 10.62 28.3 Hz, 100 kHz 10.69 0.477 sin (10pt + 63.4°) V, 0.999 sin (1000pt - 1.72°) V, 0.477 sin (105pt - 78.7°) V 10.71 0.06 sin (2pt + 88.9°) V, 2.12 sin (100pt + 45.0°) V, 3.00 sin (104pt + 0.57°)V 10.75 y1 2 y2 1 y y 1 Æ y1 1; 1 2 Æ 0; - 2 1 ; y2 2 y2 2 y2 2 y2 2 108 p 7 s + 10 p ;- -1 Æ 1 ; g1 1 Ê g2 2g1 1ˆ Á g2 1 - g ˜ Ë 12 ¯ -1 Æ 0; 108 p s + 10 7 p 10.78 12.8 kHz, -60 dB/decade 10.79 10 sin (1000pt + 10°) + 3.33 sin (3000pt + 30°)+ 3.00 sin (5000pt + 50°) V; Using MATLAB: t = linspace(0,.004); vs = sin(1000*pi*t)+0.333*sin(3000*pi*t)+0.200*sin(5000*pi*t); vo = 10*sin(1000*pi*t+pi/18)+3.33*sin(3000*pi*t+3*pi/18)+2.00*sin(5000*pi*t+5*pi/18); plot(t, 10*vs, t, vo) 11 Chapter 11 11.1 79.9 dB, 120 dB, 89.9 dB; 5.05 mV 11.3 ≥ 4.95 MW 11.5 0.100 mV, 140 dB 11.7 (a) - 46.8, 4.7 kW , 0, 33.4 dB 11.10 83.9, • , 0, 83.9 dB 11.13 (0.510 sin 3770t -1.02 sin 10000t) V, 0 11.15 - 10, 110 kW , 10 kW 11.18 -12, (-6 + 1.2sin4000pt) V 11.22 (a) 79.6 pF (b) 82 pF, 19.4 kHz 11.26 -5.00, 20.0 kW ; +6.00, 27.0 kW , 0, 33.0 kW (not a useful circuit) 11.30 0.484 A; 0.730 V; 0.730 V; ≥ 7.03 W (choose 10 W), 7.27 W 11.33 v1 - v2 ; •; R(1 + A) R 11.35 3.99 V, 3.99 V, 1.99 V, 1.99 V, 3.99 V, 199 m A; - 5 MW 11.37 3.6 kW , 49.6 kW 11.39 -1.20 V; -1.80 V; 0 to -3.00 V in 0.20-V steps 11.40 A and B taken together, B and C taken together 11.43 48.0, ∞, 0 11.47 -100, 8.62 kW , 0 11.50 785 MW , 3.75 mW 11.56 Noninverting to achieve RIN with an acceptable value for resistor R2: R OUT can be met; RIN is not achievable 11.58 -16.2 vS, 85.9 mW 11.60 0.25 percent 11.62 60 dB 11.67 0.500 sin 5000pt, 10 sin 120pt; -10, -0.037; 48.6 dB; -5.00 sin 5000 pt -0.370 sin 120pt 11.71 - 26.0 mV, 0, - 26.0 mV, yes, 90.9 kW 11.74 AV = 10,000 [u(vID + 0.0005) - u(vID - 0.0015)] 11.76 10.1 kW , 1.00 MW 11.77 -0.460 V; -0.546 V; -18.7 percent 11.79 10.0 V, 0 V; 15.0 V, 0.125 V 11.81 One possibility: 1 kW , 20 kW 11.87 Ê R2 ˆ sC( R ||R2 ) + 1 1 Á1 + R ˜ sCR + 1 Ë 1¯ 2 11.89 3 stages: 1 kW , 20 kW , 200 pF 11.94 A ( s) = V 3.653 ¥ 101 3 ; bode (-3.65e13,[13,142e7 1.916e12]) s 2 + 3.142 ¥ 107 s + 1.916 ¥ 101 2 12 11.97 20 kW , 200 kW , 796 pF 11.98 -20, 143 kHz; 78.1 dB, 72.9 kHz 11.101 Two stages 11.105 6.91, 145 kHz, [6.35, 7.53], [133 kHz, 157 kHz] 11.107 1.89 V/ms 11.109 10 V/ms 11.110 250 kW , 1 kW , 2.55 m F, 8 ¥ 104 , 50 W ; add two 109 -W resistors 11.116 200,000, 1012 W , 1 kW , unspecified, 12.7 m F 11.118 0.010 m F, 0.005 m F, 1.13 kW , 20.0 kHz; 0.005 m F, 0.0025 m F Chapter 12 12.1 (a) 0.005 mF, 0.01 mF, 1.13kW , 1, 20 kHz 12.5 K 3- K s R1R2 C1C2 + s [R1C1 (1 - K ) + C2 (R1 + R2 )] + 1 12.7 - 1; - 1 12.11 1 kW , 100 kW , 0.0159 m F 12.13 Ê ˆ 20 1 rad/s, 0.0640 rad/s, 15.6; Á 2 ˜ Ë s + 0.1s + 1¯ 12.15 5.48 kHz, 1.34 kHz, 4.05, 63.1 dB 12.18 0 12.21 (0, T/2): 0 V, (T/2, 3T/2): 1 V, (3T/2, 5T/2): 4 V, (5T/2, 7T/2): 8 V, (7T/2, 9T/2): 12 V, (9T/2, 5T): 15 V 12.24 12.6 kHz, 1.58, 7.96 kHz 12.27 -1.125 V; -1.688 V; n ¥ (-0.1875) V 12.30 000: 0, 001: 0.1220, 010: 0.2564, 100: 0.5000; 0.0716 LSB, 0.0434 LSB; 0.376 LSB, 0.188 K ; 2 LSB 12.33 12.35 -0.3125 V, -0.6250 V, -1.250 V, -2.500 V 12.37 1.0742 kW , 0.188 LSB, 0.094 LSB; 1.2929 kW , 0.224 LSB, 0.417 LSB 12.40 (a) (2n+1-1)C (b) (3n+1)C 12.43 -2.500 V, -1.875 V, -1.250 V, -0.625 V, 0 V, +0.625 V, 1.250 V, +1.875 V 12.45 (3.415468 V, 3.415781 V) 12.49 0001011111, 95 ms 12.51 167 ns 12.53 RC ≥ 0.0448 s; vO (200 ms) = 22.32 V 12.55 For q = 0, 12.57 † 1.43 percent, 2.5 percent, 5 percent, 10 percent -V1V2 / (10 4 I s) VM TT Ê sinwTT ˆ Á ˜ RC Ë wTT ¯ 13 12.59 0.759 V 12.60 2.40 Hz 12.65 2.38 V, 2.62 V, 0.240 V 12.67 0.487 V, -0.487 V, 0.974 V 12.70 0 Hz 12.73 841 ms, 416 ms Chapter 13 13.1 0.700 + 0.005 sin 2000pt V; 1.03 sin 2000pt V; 5.00 -1.03 sin 2000pt V; 2.82 mA 13.3 Bypass, coupling, coupling; 0 V 13.6 Coupling, bypass, coupling; 0 V 13.9 Coupling, coupling, coupling 13.12 Coupling, coupling 13.14 (1.78 mA, 6.08 V) 13.16 (98.4 mA, 4.96 V) 13.20 (82.2 mA, 6.04 V) 13.24 (307 mA, 3.88 V) 13.28 (338 mA, 5.40 V) 13.32 (1.00 mA, 7.50 V) 13.42 Thévenin equivalent source resistance, gate-bias voltage divider, gate-bias voltage divider, sourcebias resistor—sets source current, drain-bias resistor—sets drain-source voltage, load resistor 13.45 11.3 mA, 50 mV 13.48 (188 mA, VCE ≥ 0.7 V ), 7.52 mS, 532 kW 13.51 (1.88 mA, VCE ≥ 0.7 V), 75.0 m S, 53.3 MW 13.53 (b) +16.7%, -13.6% 13.54 90, 120; 95, 75 13.58 -120 13.60 Yes, using ICRC = (V CC + V CE)/2 13.62 2.5 mA; 30.7 V 13.64 -314, -314 13.66 -95 13.67 (-95.0, -94.1) 13.71 3 13.74 1.25 A 13.77 10%, 20% 13.80 Virtually any desired Q-point 13.81 (156 mA, 9 V) 14 13.87 400 = 133,000iP + v PK; (1.4 mA, 215 V); 1.6 mS, 55.6 kW , 89, - 62.7 13.88 FET 13.91 111 mA, 1400 13.94 Yes, it is possible although the required value of VGS - V TN (6.70 V) is getting rather large 13.97 0.5 V, (125 mA, 7.5 V) 13.98 2.5 V, 25 V 13.100 3 13.102 -10.9 13.105 -7.27 13.110 833 mA 13.112 33.3 kW , 94.4 kW 13.115 647 W , 3.62 kW 13.116 (b) 1 MW , 0, - 7.45 MW , 3.53 MW 13.118 6.8 MW , 45.8 kW 13.120 10 MW , 508 kW 13.122 1 MW , 6.82 kW 13.125 -15.0 vS, 45.8 kW 13.129 -60.7, 630 W, 960 W; gain reduced by 25 percent due to lower input resistance 13.131 62.9 kW , 96.0 kW , -64.4 13.133 50 mA/V2, 842 kW 13.139 1.38 mW, 0.581 mW, 0.960 mW, 0.887 mW, 2.43 mW 13.143 0.497 mW, 0.554 mW, 2.07 mW, 24.6 mW, 24.6 mW, 5.58 mW 13.146 VCC/15 13.147 3.38 V, 13.6 V 13.150 32.9 mA, 2.30 V 13.152 356 mA, 2.02 V 13.153 500 mA, 1.76 V Chapter 14 14.1 (a) C-C, (b) not useful, (h) C-B, (o) C-D 14.8 - 5.00, • , 20.0 kW , • ; - 10.0, • , 10.0 kW , • 14.10 (a) -6.91 (e) -120 14.11 6.58 kW , 66.7 kW 14.16 - 120, - 60.9, 2.83 kW , 8.20 kW , 6.76 mV 14.17 - 14.7, - 11.6, 368 kW , 75 kW , 183 mV 14.19 - 3.07, 84.9, 1.00 MW , 39.0 kW , 1.49 V 14.24 0.909, • , 100 W , • 15 14.27 0.982, 1.29, 31.6 kW , 9.19 W , 2.83 V 14.28 0.956, 969, 1.00 MW , 555 W , 628 V 14.30 (0.005 + 0.2 VR4) V 14.33 48.8, 2.00 kW , • , 1; 14.3, 2.00 kW , • , 1 14.34 48.8, 1.98 kW , 4.92 MW , 1; 23.7, 1.98 kW , 10.1 MW , 1 14.38 5.51, 0.178, 2.73 kW , 24.0 kW , 0.398 V 14.39 36.5, 0.274, 252 W , 39.0 kW , 14.9 mV 14.43 44.5 W 14.45 632 W 14.47 ( b o + 1) ro = 153 M W 14.48 Av = 398 with Rin = 1 MW: A C-E amplifier operating at low current should be able to achieve both high Av and high Rin. It would be difficult to achieve AV = 52 dB with an FET stage. 14.51 A follower has a gain of approximately 0 dB. The input resistance of a C-C amplifier is approximately ( b o + 1) RL ª 101(10 k W) = 1 M W . Therefore a C-D stage would be preferred to achieve the gain of approximately 1 with Rin = 25 MW . 14.52 A noninverting amplifier is needed. Either the C-B or C-G amplifier should be able to achieve AV = +10 with R in = 2 kW with proper choice of the Q-point. 14.55 1.66 W 14.59 m f v s, R5 + ro (1 + gm R5 ) @ ro (1 + gm R5 ) 14.61 v s, ( Rth + rp ) /(b o + 1) † 14.63 (a) z 21 = RB † 14.65 † (a) (b o + 1) RE rp + (b o + 1) RE g21 = + gm RD g12 = 14.68 (1 / gm )(1 + RL / ro ) 14.69 @ RB z12 = RD R @D RD + ro ro RB RE RB @ RB + rp + (b o + 1) RE (b o + 1) g21 @ gm ro = m f g12 -0.984, 0.993, 0.703 V † 14.72 † 14.74 for mf >> 1 SPICE: (106 m A, 7.14 V), - 14.2, 369 kW , 65.8 kW SPICE: (9.81 m A, 5.74 V), 0.983, 11.0 MW , 2.58 kW 14.78 SPICE: (268 m A, 8.60 V), 4.26, 1.27 kW , 18.8 kW 14.79 SPICE: (5.59 mA, 5.93 V), - 3.27, 10.0 MW , 1.53 kW 14.81 SPICE: (3.84 mA, 10.0 V), 0.953, 1.00 MW , 504 W 14.83 (a) 0.01 mF, 270 mF, 0.15 mF, (b) 2.7 mF 14.86 (a) 0.50 mF, 0.68 mF 14.89 (a) 8200 pF, 820 pF (b) 0.042 mF, 1800 pf, 0.015 mF 14.91 33.3 mA 14.93 R 1 = 120 kW , R2 = 110 kW 16 z 21 @ bo + 1 z12 14.95 The second MOSFET 14.97 Avmax = 54.8, Avmin = 44.8 beyond the Monte Carlo results by approximately 2 percent of nominal gain. 14.101 Voltage is not sufficient—transistor will be saturated. † 14.105 95.2, 1000 W , • , 1; A v is 2 ¥ larger, Rin is 2 ¥ smaller Chapter 15 15.1 4.12, 1 MW , 64.3 W 15.2 4.44 15.5 2.19 15.7 711, 8.29 kW , 401 W 15.10 466, 73.8 kW , 20 kW 15.16 (a) (5.00 mA, 10.3 V), (1.88 mA, 3.21 V), (2.47 mA, 6.86 V) (b) (5.00 mA, 9.45 V), (2.38 mA, 0.108 V), (3.15 mA, 4.60 V) Q2 is saturated! The circuit will no longer function properly as an amplifier. 15.17 (a) (325 mA, 7.14 V), (184 mA, 7.85 V), 86.1 dB 15.20 (a) (50.0 mA, 1.58 V), (215 mA, 13.2 V), -63.2, 1 MW , 1.91 kW 15.22 (a) (223 mA, 2.87 V), (1.96 mA, 5.00 V), -218, 7.61 kW , 241 W (b) -1.49, 75.6 kW 15.25 (a) (4.44 mA, 1.40 V), (23.3 mA, 2.30 V) (b) (4.08 mA, 1.42 V), (23.6 mA, 2.28 V) 15.27 4.05 MW , 2.00 mS, 553 kW , 77.2 pS 15.30 3.28 MW , 2.50 mS, 640 kW , 8190, 1600 15.35 I C 2 = b F I C 1 , gm = gm , rp¢ = b o rp , ro¢ = ¢ 15.38 I C 2 = b F I C 1 , gm = gm , rp¢ = b o rp , ro¢ = ro b o , m¢f = m f ¢ ¢ 15.42 (8.52 mA, 1.42 V), (8.40 mA, 0.940 V), -48.1, cascode amplifier 15.43 (a) (20.7 mA, 5.87 V) (b) -273, 243 kW , 660 kW (c) -0.604, 47.1 dB, 27.3 MW 15.46 (a) (8.43 mA, 1.36 V) (b) -33.7, -1.02 kW, • for differential output, 24.4 dB for single-ended mf ro , b ¢ = b o ( b o + 1), m ¢f = o 2 2 output, 594 kW , 200 kW , 4.90 MW , 50 kW 15.48 RE E = 1.1 MW , R C = 1.0 MW 15.50 (200 mA, 4.90 V); differential output: -312, 0, •; single-ended output: -155, -0.0965, 64.2 dB; 25.0 kW , 40.4 MW , 78.0 kW , 39.0 kW 15.52 1.00 m A, 2.02 m A, 2.50 GW 15.54 VO = 1.09 V, vo = 0; V O = 1.09 V, vo = 219 mV; 5.00 mV 15.56 (47.4 mA, 6.23 V); Differential output: -379, 0, •; single-ended output: -190, -0.661, 49.2 dB; 158 kW , 22.7 MW 15.60 -16.1 V, -13.1 V, -3.00 V 15.61 -283, 4.94 ¥ 10- 3 , 95.2 dB 17 15.66 (24.2 mA, 5.36 V); Add = - 45.9, A c c = -0.738, differential CMRR = •, single-ended CMRR = 24.7 dB, • , • 15.69 (91.3 mA, 12.9 V); Add = - 16.7, A c c = -0.486, differential CMRR = •, single-ended CMRR = 25.1 dB, • , • 15.74 (150 mA, 7.60 V); Add = - 26, A c c = -0.233, differential CMRR = •, single-ended CMRR = 34.9 dB, • , • 15.77 (142 mA, 7.27 V); Add = - 21.7, A c c = -0.785, differential CMRR = •, single-ended CMRR = 22.9 dB, • , • 15.79 (20.0 mA, 6.67 V); Add = - 26.8, A c c = -0.119, differential CMRR = •, single-ended CMRR = 41.0 dB, • , • 15.80 -3.08 V, -1.22 V, 62.1 mV 15.83 (99.0 mA, 10.8 V); Add = - 30.1, A c c = - 0.165, 553 kW 15.86 (400 mA, 1.71 V), (100 mA, -2.82 V), -26.8, 0, ∞ 15.88 (24.8 mA, 12.0 V), (500 mA, 12.0 V), 1040, 202 kW , 20.6 kW , 147 MW , v1 15.92 (a) (98.8 mA, 14.3 V), (300 mA, 14.3 V) (b) 551, 40.5 kW, (c) 49.0 kW (d) 34.6 MW, (e) v2 15.97 (98.8 mA, 14.3 V), (300 mA, 14.3 V), 27800, 40.5 kW 15.102 (a) (250 mA, 15.6 V), (500 mA, 15.0 V) (b) 4300, •, 165 kW (c) v2 (d) v1 15.107 (250 mA, 4.92 V), (6.10 mA, 4.30 V), (494 mA, 5.00 V), 4230, • , 97.5 kW 15.109 (b-e) 12100, 101 kW , 180 kW , 66.3 MW , v2 15.113 (250 mA, 10.9 V), (2.00 mA, 9.84 V), (5.00 mA, 12.0 V), 866, • , 127 W 15.115 (300 mA, 5.10 V), (500 mA, 2.89 V), (2.00 mA, 5.00 V), 529, • , 341 W 15.120 (99.0 mA, 5.00 V), (500 mA, 3.41 V), (2.00 mA, 5.00 V), 11400, 50.5 kW , 224 W 15.121 (4.95 mA, 2.36 V), (24.5 mA, 3.07 V), (245 mA, 3.00 V), 249, 1.01 MW , 1.63 kW , vB , vA , 900, rp3 and rp4 are low, RIN5 is low. 15.123 (99.0 mA, 1.40 V), (990 mA, 12.0 V), 189, 50.6 kW , 1.06 kW 15.127 (24.8 mA, 17.3 V), (24.8 mA, 17.3 V), (9.62 mA, 15.9 V), (490 mA, 16.6 V), (49.0 mA, 17.3 V), (4.95 mA, 18.0 V), 88.5 dB, 202 kW , 18.1 W 15.129 36.8 mA 15.131 196 mA 15.135 22.8 mA 15.137 5 mA, 0 mA, 10 mA, 12.5 percent 15.138 100 percent 15.141 70 mA, 19.6 V 15.144 6.98 mA, 0 mA 15.145 25.0 mW 15.147 (a) 22.8 mA, 43.9 MW 15.151 Two of many: 75 kW , 62 kW , 150 W ; 68 kW , 12 kW , 1 kW 15.155 96.7 m A, 16.3 MW 18 15.158 20.2 m A, 101 MW 15.164 16.9 m A, 168 MW , 5.11 m A, 555 MW , 16.9 m A, 168 MW 15.166 44.1 m A, 22.1 MW , 10.0 m A, 210 MW 15.170 100 mA, 657 GW 15.171 (9.34 mA, 9.03 V), (4.62 mA, 7.62 V), 96.5 dB 15.173 b o1 m f 1 /2 15.174 3.16 V Chapter 16 16.1 4.06 kW £ R £ 4.31 kW 16.4 19.8 percent, 13.3 percent 16.6 7.69 percent, 0.813 mA, 0.855 mA 16.11 274 m A, 383 kW , 574 m A, 192 kW 16.16 (a) 944 m A, 68.9 kW , 1.52 mA, 41.5 kW 16.18 458 kW , 103 m A, 541 kW , 103 m A 16.20 185 mA, 299 mA 16.24 125 m A, 690 m A, 1.31 mA, 600 kW , 100 kW , 66.4 kW 16.27 10 16.31 15.7 m A, 5.10 MW 16.34 12.3 m A, 31.3 MW , 29.3 m A, 15.2 MW 16.38 172 kW , 9.78 kW , 0.445 16.42 -VE E + 1.16 V for VCB3 ≥ 0 16.47 -VE E + 1.91 = -8.09 V 16.48 3.80/1 16.50 17.5 mA, 1.16 GW ; 20.3 kV; 2.11 V 16.52 5%, 0 16.55 16.9 mA, 163 MW , 2750 V; 2VB E = 1.4 V 16.57 3.80/1 16.59 127 mA, 1.89 MW, 129 mA, 1.97 MW 16.62 8.22 kW 16.65 318 mA, 295 mA, 66.5 mA 16.68 187 mA 16.72 46.5 mA, 140 mA 16.75 n > 1 /3 16.77 26.4 mA 16.82 30.7 mA, 15.3 mA 16.85 462 mA, 308 mA 19 16.88 1.172 V, 307K 16.91 44.0 mV/K 16.94 2.293 kW , 10.47 kW 16.96 79.1, 6.28 x 10-5, 122 dB 16.100 1200, 0, • , 2.9 V 16.104 (100 mA, 8.70 V), (100 mA, 7.45 V), (100 mA, 2.50 V), (100 mA, 1.25 V), 323, 152 16.106 (125 mA, 1.54 V), (125 mA, 2.79 V), (125 mA, 2.50 V), (125 mA, 1.25 V); 19600 16.109 171 mA 16.110 (b) 100 mA 16.111 (125 mA, 8.63 V), (125 mA, 1.31 V), (125 mA, 10.0 V), (125 mA, 8.71 V), (125 mA, 1.29 V), (125 mA, 6.00 V), (125 mA, 2.75 V); 43.4; 14,900 16.113 10,800 16.118 6400; 80,000 16.119 7500; 7500 16.122 7.78, 574 W , 3.03 x 105, 60.0 kW 16.124 ± 1.4 V, ± 2.4 V 16.127 271 kW , 255 W 16.129 VE E ≥ 2.8 V, V CC ≥ 1.4 V; 3.8 V, 1.7 V 16.130 0.406 mS, 2.83 MW 16.134 (100 mA, 15.7 V), (50 mA, 12.9 V), (50 mA, 0.700 V), (50 mA, 1.40 V), (50 mA, 29.3 V), (100 mA, 0.700 V), (100 mA, 13.6 V), 1 mS, 752 kW 16.136 (25 mA, 2.50 V), (50 mA, 3.20 V) 16.137 (a) 125 mA, 75 mA, 62.5 mA, 37.5 mA (b) 125 mA, 0, 75 mA (c) 125 mA, 0, 75 mA Chapter 17 s2 25s , yes, , 3.18 Hz,3.19 Hz ( s + 1)( s + 20) ( s + 20) 17.1 25, 17.4 200, 17.7 200, 17.10 (b) -14.1 (23.0 dB), 11.8 Hz 17.12 19.3 dB, 151 Hz; 35.0 dB, 12.6 Hz 17.21 7.24 dB, 19.2 Hz 17.23 0.964, 0.627 Hz 1 yes, 1.59 kHz,1.58 kHz Ê ˆÊ s sˆ 1 + 4 ˜ Á1 + 5 ˜ Á Ë 10 ¯ Ë 10 ¯ s2 1 , , , .356 Hz, 71.2 Hz; 0.380 Hz, 66.7 Hz ( s + 1)( s + 2) Ê s ˆÊ sˆ Á1 + 500 ˜ Á1 + 1000 ˜ Ë ¯Ë ¯ 20 17.24 0.152 mF 17.27 Cannot reach 1 Hz; fL = 13.1 Hz for C1 = • , limited by C 3 17.29 0.351 mF 17.31 308 ps 17.34 -100; -107 17.36 0.977; 0.978 17.37 - 5100, - 98.0, - 5000, - 100; - 350, - 42.9, - 300, - 50 17.40 -98.7, 1.42 MHz 17.46 -129, 1.10 MHz 17.50 1/105 RC; 1/106 RC; 1/sRC 17.52 (2750 - j4.99) W , (2730 - j226) W , (836 - j1040) W 17.58 -9.44, 43.9 Hz, 9.02 MHz; 85.1 MHz 17.62 -1300; -92.3; -100, -1200 17.63 9.13, 40.9 MHz 17.66 2.30, 10.9 MHz 17.71 0.964, 114 MHz 17.73 C GD + C GS/(1 + gm RL) for w << w T 17.76 99.3 kHz 17.77 48.2 kHz 17.87 4 GHz, 39.8 ps 17.90 781 mA 17.91 8.33 MHz 17.95 10.6 MHz, 33.3 V/ms 17.100 8 V/ms 17.104 22.5 MHz, 2.91, -41.1 17.105 20.1 pF, 12.6, n = 2.81, 21.9 pF 17.107 15.2 MHz; 27.5 MHz 17.108 13.4 MHz, 7.98, 112/- 90°; 4.74 MHz, 5.21, 46.1/- 90° 17.113 10.9 MHz, 16.4, -75.1; 10.1 MHz, 3.96, -35.4 Chapter 18 18.5 1/(1+Ab); 9.99 ¥ 10 -3 percent 18.8 100 dB 18.13 800 MW ; 2.00 W ; 20.0 MW ; 50 mW 18.15 18.8 kW , 1.02 mS, - 75.0 ¥ 103 , 3141, 0.0993, 10.0; 0.0993 @ 0; 75,000 @ 0.0993 18.17 0.999, 43.9 MW , 2.49 W , 98.9 ms 18.20 Ab/(1 + Ab); 99.9 percent 18.22 - 33.0 kW ; 8.11 kW ; 0.705 W 21 18.23 82.2 W ; 46.2 W ; - 32.4 kW ; - 32.4 18.24. 36.8 W ; 18.6 W ; - 34.4 kW 18.26 0.973, 973 W 18.29 - 446 kW , 50.4 kW , 2.45 kW 18.31 - 11.0, 15.2 W , 2.72 MW 18.32 21.9 W ; 12.3 W ; - 35.1 18.37 b o / ( b o + 1), 2/ gm , ( b o + 1)ro 18.40 58.2 dB 18.43 91.8 18.45 ( s / R2C 2 ) / [s 2 + s(1/ R2 C2 + 1 / ( R ||R2 )C1 ) + 1/ R R2C1C 2 ] 1 1 18.50 T V = 987, T I = 110, T = 98.5 18.59 114 dB, 0 Hz, 1000 Hz, 0 Hz, 101 kHz 18.62 46.1 kHz, 9.31 Hz, 81.0 kHz, 5.29 Hz 18.69 110 kHz; A £ 2000; larger 18.71 yes, but almost no phase margin; 1.83° 18.73 90.0° 18.75 12°; yes 18.81 phase margin is undefined; T ( j w) < 1 for all w 18.85 38.4° 18.86 w = 1/RC , R F = 2R 18.88 63.7 kHz, 6.85 V 18.90 18.4 kHz, 10.7 V 18.95 9.00 MHz, 1.20 18.101 11.2 MHz, 18.1 MHz, 1.00 18.102 15.9155 mH, 15.9155 fF; 10.008 MHz, 10.003 MHz 18.103 9.190 MHz; 9.190 MHz 22 ...
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