Lecture_11 - 2 , V TN = 0.8 V Find the effective DC...

Info iconThis preview shows pages 1–6. Sign up to view the full content.

View Full Document Right Arrow Icon
EE 310 Lecture 11 Biasing with a Current Source Design the circuit to produce I D = 250 μA and V D = 2.5 V k' n = 80 μA/V 2 , W/L = 3, V TN = 0.8 V Lecture 11 Page 1
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
EE 310 Lecture 11 The Active Load Problem: Resistors consume too much chip area. How do we replace them with something smaller? Lecture 11 Page 2
Background image of page 2
EE 310 Lecture 11 Enhancement Load Example Calculate V DS and I D for the enhancement load device shown K n = 50 μA/V
Background image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 4
Background image of page 5

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 6
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: 2 , V TN = 0.8 V Find the effective DC resistance of the MOSFET at the Q-point Lecture 11 Page 3 EE 310 Lecture 11 Device + Load Example What can we build with this basic structure? Lecture 11 Page 4 EE 310 Lecture 11 The MOSFET Current Mirror as a Current Source Lecture 11 Page 5 EE 310 Lecture 11 All-MOSFET Current Mirror (no resistors) Lecture 11 Page 6...
View Full Document

This note was uploaded on 10/02/2008 for the course EE 310 taught by Professor Wharton,markjedwards,perrysto during the Fall '07 term at Pennsylvania State University, University Park.

Page1 / 6

Lecture_11 - 2 , V TN = 0.8 V Find the effective DC...

This preview shows document pages 1 - 6. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online