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Lecture_11 - 2 V TN = 0.8 V Find the effective DC...

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EE 310 Lecture 11 Biasing with a Current Source Design the circuit to produce I D = 250 μ A and V D = 2.5 V k' n = 80 μ A/V 2 , W/L = 3, V TN = 0.8 V Lecture 11 Page 1
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EE 310 Lecture 11 The Active Load Problem: Resistors consume too much chip area. How do we replace them with something smaller? Lecture 11 Page 2
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EE 310 Lecture 11 Enhancement Load Example Calculate V DS and I D for the enhancement load device shown K n = 50
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Unformatted text preview: 2 , V TN = 0.8 V Find the effective DC resistance of the MOSFET at the Q-point Lecture 11 Page 3 EE 310 Lecture 11 Device + Load Example What can we build with this basic structure? Lecture 11 Page 4 EE 310 Lecture 11 The MOSFET Current Mirror as a Current Source Lecture 11 Page 5 EE 310 Lecture 11 All-MOSFET Current Mirror (no resistors) Lecture 11 Page 6...
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