Lecture_9

Lecture_9 - A Summary of MOSFET Relationships EE 310...

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Unformatted text preview: A Summary of MOSFET Relationships EE 310 Lecture 9 NMOS Conduction Parameter Definitions Kn = 1 W nCox 2 L PMOS Conduction Parameter Definitions Kp = 1 W p Cox 2 L Kn = 1 W k' n 2 L Kp = 1 W k' p 2 L where k' n = nCox where k' p = p Cox Table 3.1 (1 + vDS ) (1 + vSD ) Lecture 9 Page 1 The MOSFET at DC EE 310 Lecture 9 Lecture 9 Page 2 DC Analysis Procedure 1. Zero all independent ac sources; replace capacitors with opens. 2. Assume saturation region operation (VDS > VDS sat) 3. Using the saturation region equation and the circuit relationships, solve for VGS. There will be two roots for a quadratic equation; so discard the incorrect root. 4. Solve for ID and then VDS. 5. Compare your answer for VDS to VDS sat (VDS sat = VGS VTN). If VDS > VDS sat then the device is in saturation. 6. If, however, VDS < VDS sat then the device is in the nonsaturation region. Repeat the analysis using the nonsaturation region equation. EE 310 Lecture 9 Lecture 9 Page 3 Example 3.3 Find ID and VDS : EE 310 Lecture 9 Device Parameters: VTN = 1 V, Kn = 0.1 mA/V2 5V 30 kW 20 kW 20 kW Lecture 9 Page 4 A Graphical Visualization Technique -- The Load Line EE 310 Lecture 9 Lecture 9 Page 5 Exercise 3.5 Kn = 500 A/V2 , VTN = 1 V EE 310 Lecture 9 Lecture 9 Page 6 Exercise 3.5 (Continued) Kn = 500 A/V2 , VTN = 1 V EE 310 Lecture 9 Lecture 9 Page 7 ...
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Lecture_9 - A Summary of MOSFET Relationships EE 310...

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