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HE2Sol - ECE3040(Fall 2005)HOUR EXAM#2 Solution Keys 1(8...

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Unformatted text preview: ECE3040 (Fall 2005)HOUR EXAM #2 Solution Keys 1.] (8 pts} 1.1.1 Reversed bias 1.1.2 Zener process will be responsible the surge in the reverse biased current because it is a 13+~n+ diode 1.2 (12 pts) 1.2.1 Zero bias (no applied voltage is required for a solar cell) 1.2.2 Electron-hole-pair generation at the vicinity of depletion region 1.2.3 GaAs is a direct bandgap semiconductor 1.3 V55: 02 V V35 = 0.7 V -) V35 : 0.5 V : base-collector junction is forward biased. -) The npn is under saturation mode. 1.4 (S pis) The quasi-Fermi level will be the same as the Fermi-level in such regions. 1.5 (8 pts) Operation Mode Base-Emitter Junction I Base-Collector J unetion ACTIVE Forward Reverse CUT-OFF INVERT SA TURA HON Forward 1 6 (10 pts} A: 4 or 5 B: 2 C: 3 D: 7 E: 7 and 11 1.7 1.7.1 C : higher Ny’NB ratio and shorter base width 1.7.2 C : higher NE/NB ratio and shorter base width 2. 2.1 Vhi = 0.7548 (V), Em“ = 1.50 E4 (Wcm), W = 0.207 (pm) 1 2.2 mm m1; Em all:me mmmhlfim r.- rum-sub; 3. 3.1 60W") eapnugzdfn10)e XVLP w ‘0 k 4- 0 1., 5L. 0 o 51, x. 2.3 See above 2.4 . ...
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