HE3Sol - S.C Shen ECE 3040 Test 3 Solution Keys(Fall 2005...

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© S.C. Shen ECE 3040 Test 3 Solution Keys(Fall 2005) Georgia Institute of Technology School of ECE 1 ECE3040 HOUR EXAM #3 (Fall 2005) Solutions Questions 1. (40 pts) Short Answers a. (5 pts) The carrier transport is dominated by majority carriers in MS junctions through drift and relaxation, whereas the PN junction carrier transport is dominated by minority carrier diffusion process. b. (5 pts) Reversed bias c. (8 pts) Early effect is observed in bipolar transistors (BJT or HBT). It is observed under the forward active mode and the phenomenon is related to the base width modulation. With the increase of the reverse-biased base-collector junction, the neutral base region reduces. As a result, the current increases with the increase in the base-collector reverse bias under active mode. d. (6 pts) The metal-oxide-semiconductor section at the drain side of the channel is biased at the onset of the strong inversion, or “channel pinch-off” condition. e.
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This note was uploaded on 10/14/2008 for the course ECE 3040 taught by Professor Hamblen during the Spring '07 term at Georgia Tech.

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HE3Sol - S.C Shen ECE 3040 Test 3 Solution Keys(Fall 2005...

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