2n3904

2n3904 - 2N3904 MMBT3904 PZT3904 2N3904 MMBT3904 C E C B...

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2N3904 / MMBT3904 / PZT3904 2N3904 MMBT3904 PZT3904 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* TA = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Symbol Parameter Value Units V CEO Collector-Emitter Voltage 40 V V CBO Collector-Base Voltage 60 V V EBO Emitter-Base Voltage 6.0 V I C Collector Current - Continuous 200 mA T J , T stg Operating and Storage Junction Temperature Range -55 to +150 ° C C B E TO-92 B C C SOT-223 E C B E SOT-23 Mark: 1A 1997 Fairchild Semiconductor Corporation
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2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units V (BR)CEO Collector-Emitter Breakdown Voltage I C = 1.0 mA, I B = 0 40 V V (BR)CBO Collector-Base Breakdown Voltage I C = 10 μ A, I E = 0 60 V V (BR)EBO Emitter-Base Breakdown Voltage I E = 10 μ A, I C = 0 6.0 V I BL Base Cutoff Current V CE = 30 V, V EB = 0 50 nA I CEX Collector Cutoff Current V CE = 30 V, V EB = 0 50 nA OFF CHARACTERISTICS ON CHARACTERISTICS* SMALL SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS (except MMPQ3904) * Pulse Test: Pulse Width 300 μ s, Duty Cycle 2.0% NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10) Spice Model f T Current Gain - Bandwidth Product I C = 10 mA, V CE = 20 V, f = 100 MHz 300 MHz C obo Output Capacitance V CB = 5.0 V, I E = 0, f = 1.0 MHz 4.0 pF C ibo Input Capacitance V EB = 0.5 V, I C = 0, f = 1.0 MHz 8.0 pF NF Noise Figure (except MMPQ3904) I C = 100 μ A, V CE = 5.0 V, R S =1.0k , f=10 Hz to 15.7 kHz 5.0 dB t d Delay Time V CC = 3.0 V, V BE = 0.5 V, 35 ns t r Rise Time I C = 10 mA, I B1 = 1.0 mA 35 ns t s Storage Time V CC = 3.0 V, I C = 10mA 200 ns t f Fall Time I B1 = I B2 = 1.0 mA 50 ns h FE DC Current Gain I C = 0.1 mA, V CE = 1.0 V I C = 1.0 mA, V CE = 1.0 V I C = 10 mA, V CE = 1.0 V I C = 50 mA, V CE = 1.0 V I C = 100 mA, V CE = 1.0 V 40 70 100 60 30 300 V CE(sat) Collector-Emitter Saturation Voltage I C = 10 mA, I B = 1.0 mA I C = 50 mA, I B = 5.0 mA 0.2 0.3 V V V BE(sat) Base-Emitter Saturation Voltage I C = 10 mA, I B = 1.0 mA I C = 50 mA, I B = 5.0 mA 0.65 0.85 0.95 V V
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2N3904 / MMBT3904 / PZT3904 Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N3904 *PZT3904 P D Total Device Dissipation Derate above 25 ° C 625 5.0 1,000 8.0 mW mW/ ° C R θ JC Thermal Resistance, Junction to Case 83.3 ° C/W R θ JA Thermal Resistance, Junction to Ambient 200 125 ° C/W Symbol Characteristic Max Units **MMBT3904 MMPQ3904 P D Total Device Dissipation Derate above 25 ° C 350 2.8 1,000 8.0 mW mW/ ° C R θ JA Thermal Resistance, Junction to Ambient Effective 4 Die Each Die 357 125 240 ° C/W ° C/W ° C/W Typical Characteristics Base-Emitter ON Voltage vs Collector Current 0.1 1 10 100 0.2 0.4 0.6 0.8 1 I
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2n3904 - 2N3904 MMBT3904 PZT3904 2N3904 MMBT3904 C E C B...

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