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2n3906 - 2N3906 MMBT3906 PZT3906 2N3906 MMBT3906 C E C B...

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2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 μ A to 100 mA. Sourced from Process 66. Absolute Maximum Ratings* TA = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 2N3906 PZT3906 MMBT3906 Symbol Parameter Value Units V CEO Collector-Emitter Voltage 40 V V CBO Collector-Base Voltage 40 V V EBO Emitter-Base Voltage 5.0 V I C Collector Current - Continuous 200 mA T J , T stg Operating and Storage Junction Temperature Range -55 to +150 ° C C B E TO-92 B C C SOT-223 E C B E SOT-23 Mark: 2A 1997 Fairchild Semiconductor Corporation
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2N3906 / MMBT3906 / PZT3906 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS ON CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS (except MMPQ3906) * Pulse Test: Pulse Width 300 μ s, Duty Cycle 2.0% Spice Model V (BR)CEO Collector-Emitter Breakdown Voltage* I C = 1.0 mA, I B = 0 40 V V (BR)CBO Collector-Base Breakdown Voltage I C = 10 μ A, I E = 0 40 V V (BR)EBO Emitter-Base Breakdown Voltage I E = 10 μ A, I C = 0 5.0 V I BL Base Cutoff Current V CE = 30 V, V BE = 3.0 V 50 nA I CEX Collector Cutoff Current V CE = 30 V, V BE = 3.0 V 50 nA h FE DC Current Gain * I C = 0.1 mA, V CE = 1.0 V I C = 1.0 mA, V CE = 1.0 V I C = 10 mA, V CE = 1.0 V I C = 50 mA, V CE = 1.0 V I C = 100 mA, V CE = 1.0 V 60 80 100 60 30 300 V CE(sat) Collector-Emitter Saturation Voltage I C = 10 mA, I B = 1.0 mA I C = 50 mA, I B = 5.0 mA 0.25 0.4 V V V BE(sat) Base-Emitter Saturation Voltage I C = 10 mA, I B = 1.0 mA I C = 50 mA, I B = 5.0 mA 0.65 0.85 0.95 V V f T Current Gain - Bandwidth Product I C = 10 mA, V CE = 20 V, f = 100 MHz 250 MHz C obo Output Capacitance V CB = 5.0 V, I E = 0, f = 100 kHz 4.5 pF C ibo Input Capacitance V EB = 0.5 V, I C = 0, f = 100 kHz 10.0 pF NF Noise Figure (except MMPQ3906) I C = 100 μ A, V CE = 5.0 V, R S =1.0k , f=10 Hz to 15.7 kHz 4.0 dB t d Delay Time V CC = 3.0 V, V BE = 0.5 V, 35 ns t r Rise Time I C = 10 mA, I B1 = 1.0 mA 35 ns t s Storage Time V CC = 3.0 V, I C = 10mA 225 ns t f Fall Time I B1 = I B2 = 1.0 mA 75 ns PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0 Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4 Xtf=6 Rb=10) PNP General Purpose Amplifier (continued)
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2N3906 / MMBT3906 / PZT3906 Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N3906 *PZT3906 P D Total Device Dissipation Derate above 25 ° C 625 5.0 1,000 8.0 mW mW/ ° C R θ JC Thermal Resistance, Junction to Case 83.3 ° C/W R θ JA Thermal Resistance, Junction to Ambient 200 125 ° C/W Symbol Characteristic Max Units **MMBT3906 MMPQ3906 P D Total Device Dissipation Derate above 25 ° C 350 2.8 1,000 8.0 mW mW/ ° C R θ JA Thermal Resistance, Junction to Ambient Effective 4 Die Each Die 357 125 240 ° C/W ° C/W ° C/W PNP General Purpose Amplifier (continued) Typical Characteristics Base Emitter ON Voltage vs Collector Current P 66 0.1
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