ECE351_HW5_S

ECE351_HW5_S - ECE351 Darlington Push-Pull Amplifier Design...

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Unformatted text preview: ECE351 Darlington Push-Pull Amplifier Design Specify the Design Parameters. Load Resistance RL := 8 ohm PL := 4 watt RLmin := RL ( 1 - R Ltol) RLmax := RL ( 1 + RLtol) Load tolerance 5% RLtol := 0.05 Minimum power to load Minimum Load Resistance Maximum Load resistance Specity the available power supply VCC := 15 volt Find the worst case peak current to the load needed to deliver the specified power. ILpeak := 2 PL RLmin ILpeak = 1.026 amp Find the worst case peak voltage across the load needed to deliver the specified power. VLpeak := 2 RLmax PL VLpeak = 8.198 volt Assume the collector current through transistor U1A is ILpeak. Find the Tx specs. For the TIP31 at ILpeak = 1.026 amp VCE1sat := 1.2 volt h FE1min := 25 VBE1on := 1.8 volt Find the worst case peak base current through transistor Q1 ILpeak IB1peak := (hFE1min + 1) IB1peak = 39.461 mA Assume that IB1peak is approximately the collector current of Tx Q3. Find the Tx specs. IC2peak := IB1peak For thr 2N3904 at h FE2min := 60 IC2peak = 39.461 mA VCE2sat := 0.3 volt VBE2sat := 0.95 volt Note: Vbe was not specified at 40 mA, We will assume it has a value close to the specified value at 50 mA. Calculate the peak base current of Tx U3A. IB2peak := (hFE2min + 1) IB1peak IB2peak = 646.897 A This current must be supplied through Rb. Calculate the Peak voltage at the base of Q3. Specify a 5% value for the emitter resistor. REmax := RE 1.05 RE := 1 REmin := RE 0.95 VBpeak := ILpeak ( REmax + RLmax) + VBE1on + VBE2sat Calculate an upper limit on a 5 % resistor for RB. VBpeak = 12.445 volt VCC- VBpeak RB := IB2peak ( 1.05) RB must be less than RB = 3.761 k Choose a standard 5% resistor for RB. RB := 3.3 k Calculate the power dissipated by the various elements. The power supplied by Vcc is PVcc := 1 VCC ILpeak PVcc = 4.899 watt Find the max and min power dissipated by each resistor. PREmax := PREmin := 1 4 1 4 ILpeak R Emax ILpeak REmin 1 4 ILpeak R Lmax ILpeak RLmin 2 2 2 2 PREmax = 0.276 watt PREmin = 0.25 watt PRLmax = 2.211 watt PRLmin = 2 watt PRLmax := PRLmin := 1 4 P.RLmin is only 1/2 the power spec because this is the power supplied to RL from Vcc. The other half comes from Vee. Calculate the max power dissipated by the U1A. Ptip := PVcc - PRLmin - PREmin Ptip = 2.649 watt CollectorEmitter Saturation Voltage -- VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc CollectorEmitter Sustaining Voltage -- VCEO(sus) = 60 Vdc (Min) -- TIP31A, TIP32A VCEO(sus) = 80 Vdc (Min) -- TIP31B, TIP32B VCEO(sus) = 100 Vdc (Min) -- TIP31C, TIP32C High Current Gain -- Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO220 AB Package (1) IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 .. Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data Preferred devices are Motorola recommended choices for future use and best overall value. . . . designed for use in general purpose amplifier and switching applications. Complementary Silicon Plastic Power Transistors SEMICONDUCTOR TECHNICAL DATA MOTOROLA THERMAL CHARACTERISTICS *MAXIMUM RATINGS REV 1 Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range Unclamped Inductive Load Energy (1) Total Power Dissipation @ TA = 25_C Derate above 25_C Total Power Dissipation @ TC = 25_C Derate above 25_C Base Current Collector Current -- Continuous Peak EmitterBase Voltage CollectorBase Voltage CollectorEmitter Voltage Characteristic Rating Symbol TJ, Tstg VCEO VCB VEB PD PD IC IB E Symbol RJC RJA TIP31A TIP32A 60 60 65 to + 150 TIP318 TIP32B 2.0 0.016 40 0.32 1.0 3.0 5.0 5.0 80 80 32 3.125 62.5 Max TIP31C TIP32C 100 100 _C/W _C/W Watts W/_C Watts W/_C Unit Unit Adc Adc Vdc Vdc Vdc mJ _C 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 80 100 VOLTS 40 WATTS *Motorola Preferred Device TIP32A TIP32B* TIP32C* TIP31A TIP31B* TIP31C* CASE 221A06 TO220AB Order this document by TIP31A/D NPN PNP 31 TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C (1) Pulse Test: Pulse Width ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS 32 Vin 0 VEB(off) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) APPROX +11 V SmallSignal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) BaseEmitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) CollectorEmitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB = 0) (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) CollectorEmitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) TURNON PULSE APPROX +11 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. Vin t2 TURNOFF PULSE CurrentGain -- Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) Figure 2. Switching Time Equivalent Circuit t1 v 300 s, Duty Cycle v 2.0%. VCC Vin PD, POWER DISSIPATION (WATTS) TC 10 20 30 40 0 Characteristic 1.0 2.0 3.0 TA 4.0 0 0 RB t, TIME ( s) t3 t1 7.0 ns 100 < t2 < 500 s t3 < 15 ns DUTY CYCLE 2.0% APPROX 9.0 V Cjd << Ceb RC 20 4.0 V 40 Figure 1. Power Derating 60 100 80 T, TEMPERATURE (C) SCOPE TC TA TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C TIP31A, TIP32A TIP31B, TIP31C TIP32B, TIP32C 0.07 0.05 0.03 0.02 0.03 0.1 0.3 0.7 0.5 2.0 1.0 Motorola Bipolar Power Transistor Device Data 120 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) tr @ VCC = 10 V 140 VCEO(sus) VCE(sat) VBE(on) Symbol ICEO IEBO ICES hFE fT hfe tr @ VCC = 30 V 160 Min 60 80 100 3.0 20 25 10 -- -- -- -- -- -- -- -- -- td @ VEB(off) = 2.0 V Max 200 200 200 1.8 1.2 1.0 0.3 0.3 0.3 -- 50 -- -- -- -- -- IC/IB = 10 TJ = 25C Adc MHz Unit Vdc Vdc Vdc -- -- Figure 3. TurnOn Time mAdc mAdc 3.0 2N3904 / MMBT3904 / MMPQ3904 / PZT3904 N 2N3904 C C B Discrete Power & Signal Technologies MMBT3904 E TO-92 E SOT-23 Mark: 1A B MMPQ3904 B E B E B E B PZT3904 C C E SOIC-16 C C C C C C C E C B SOT-223 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 40 60 6.0 200 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 2N3904 / MMBT3904 / MMPQ3904 / PZT3904 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current I C = 10 mA, IB = 0 I C = 10 A, IE = 0 I E = 10 A, I C = 0 VCE = 30 V, VEB = 0 VCE = 30 V, VEB = 0 40 60 6.0 50 50 V V V nA nA ON CHARACTERISTICS* hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 40 70 100 60 30 300 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 0.65 0.2 0.3 0.85 0.95 V V V V SMALL SIGNAL CHARACTERISTICS fT Cobo Cibo NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Noise Figure (except MMPQ3904) IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz IC = 100 A, VCE = 5.0 V, RS =1.0k, f=10 Hz to 15.7 kHz 300 4.0 8.0 5.0 MHz pF pF dB SWITCHING CHARACTERISTICS (except MMPQ3904) td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 3.0 V, VBE = 0.5 V, I C = 10 mA, IB1 = 1.0 mA VCC = 3.0 V, IC = 10mA I B1 = IB2 = 1.0 mA 35 35 200 50 ns ns ns ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Spice Model NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10) N 2N3906 C C B 2N3906 / MMBT3906 / MMPQ3906 / PZT3906 Discrete POWER & Signal Technologies MMBT3906 E TO-92 E SOT-23 Mark: 2A B MMPQ3906 B E B E B E B PZT3906 C C E SOIC-16 C C C C C C C E C B SOT-223 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. Sourced from Process 66. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, T stg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 40 40 5.0 200 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 2N3906 / MMBT3906 / MMPQ3906 / PZT3906 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current IC = 1.0 mA, I B = 0 IC = 10 A, IE = 0 IE = 10 A, IC = 0 VCE = 30 V, V BE = 3.0 V VCE = 30 V, V BE = 3.0 V 40 40 5.0 50 50 V V V nA nA ON CHARACTERISTICS hFE DC Current Gain * IC = 0.1 mA, V CE = 1.0 V IC = 1.0 mA, V CE = 1.0 V IC = 10 mA, V CE = 1.0 V IC = 50 mA, V CE = 1.0 V IC = 100 mA, V CE = 1.0 V IC = 10 mA, I B = 1.0 mA IC = 50 mA, I B = 5.0 mA IC = 10 mA, I B = 1.0 mA IC = 50 mA, I B = 5.0 mA 60 80 100 60 30 300 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 0.65 0.25 0.4 0.85 0.95 V V V V SMALL SIGNAL CHARACTERISTICS fT Cobo Cibo NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Noise Figure (except MMPQ3906) IC = 10 mA, V CE = 20 V, f = 100 MHz VCB = 5.0 V, I E = 0, f = 100 kHz VEB = 0.5 V, I C = 0, f = 100 kHz IC = 100 A, V CE = 5.0 V, RS =1.0k, f=10 Hz to 15.7 kHz 250 4.5 10.0 4.0 MHz pF pF dB SWITCHING CHARACTERISTICS td tr ts tf Delay Time Rise Time Storage Time Fall Time (except MMPQ3906) VCC = 3.0 V, V BE = 0.5 V, IC = 10 mA, I B1 = 1.0 mA VCC = 3.0 V, I C = 10mA IB1 = IB2 = 1.0 mA 35 35 225 75 ns ns ns ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Spice Model PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0 Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4 Xtf=6 Rb=10) 5 4 3 2 1 D D Vcc 15.00V Vcc + RB1 3.3k + - DC = 15 V2 1.295V D1N4001 C Q3 Q2N3904 TIP31 + Q1 - DC = 15 V3 0 C D1 D2 D3 D4 646.5mV D1N4001 668.6mV RE1 1 50.84mV Vo + Vee -651.5mV D1N4001 -2.496mV + + RE2 D1N4001 Load 8 -653.4mV Q2N3906 1 -1.300V B Q2 TIP32 0 Q4 B + RB2 3.3k -15.00V Vee A ECE Department 5500 Wabash Avenue Terre Haute, IN 47803 Ph: (812) 877-8512 FAX: (253) 369-9536 Name: Marc E. Herniter Size Document Name A <Project Name> A Class: ECE 351 Rev 1 Sheet 1 1 Date: 5 4 3 Thursday, January 17, 2002 2 of 1 5 4 3 2 1 D D Vcc Vcc + RB1 3.3k + Q3 Q2N3904 + DC = 15 V2 D1N4001 C D1 + TIP31 Q1 - DC = 15 V3 0 C D1N4001 Vin Transient Analysis D2 D3 D4 Q2N3906 RE1 1 Vo Vee + V4 AMPLITUDE = 9.5 FREQUENCY = 1k D1N4001 Vo + + - RE2 D1N4001 1 Load 8 Q2 0 B 0 TIP32 B Q4 + RB2 3.3k Vee A ECE Department 5500 Wabash Avenue Terre Haute, IN 47803 Ph: (812) 877-8512 FAX: (253) 369-9536 Name: Marc E. Herniter Size Document Name A <Project Name> A Class: ECE 351 Rev 1 Sheet 1 1 Date: 5 4 3 Thursday, January 17, 2002 2 of 1 ** Profile: "SCHEMATIC1-Transient" [ C:\Website\Rose_Classes\ECE351\Homework\Winter01-2\HW5\darlington ... Date/Time run: 01/17/02 12:30:41 Temperature: 27.0 (A) darlington push-pull amplifier-SCHEMATIC1-Transient.dat (active) 2.0A 1.0A Load Current 0A -1.0A -2.0A 0s I(Load) Date: January 17, 2002 Time Page 1 Time: 12:32:28 0.5ms 1.0ms 1.5ms 2.0ms ** Profile: "SCHEMATIC1-Transient" [ C:\Website\Rose_Classes\ECE351\Homework\Winter01-2\HW5\darlington ... Date/Time run: 01/17/02 12:30:41 Temperature: 27.0 (B) darlington push-pull amplifier-SCHEMATIC1-Transient.dat (active) 10V Input and Output Voltages 5V 0V -5V -10V 0s V(Vo) 0.2ms 0.4ms V(Vin) 0.6ms 0.8ms 1.0ms Time Page 2 1.2ms 1.4ms 1.6ms 1.8ms 2.0ms Date: January 17, 2002 Time: 12:32:28 + I1 V2 DC = 15 DC = 40m - + 0 V3 DC = 15 D1 D1N4001 D2 D1N4001 Q1 TIP31 - Vo + + R1 8 Q3 Q2N3906 Vin Q2 TIP31 Transient Analysis 0 + V1 AMPLITUDE = 10 FREQUENCY = 1k - 0 ** Profile: "SCHEMATIC1-Trans" [ C:\Documents and Settings\herniter\My Documents\Website\Rose_Classes\EC... Date/Time run: 01/19/06 09:25:36 Temperature: 27.0 (A) Trans.dat (active) 12V 8V 4V 0V -4V -8V -12V 0s V(Vin) V(Vo) Time Page 1 Time: 09:27:13 Date: January 19, 2006 1.0ms 2.0ms 3.0ms 4.0ms 5.0ms ...
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