The value appears O.K.
V
bi_GaAs
300 K
⋅
(
)
1.158V
=
Test the function at 300 K and compare to the value in the notes:
V
bi_GaAs
T
(
)
K
B
T
⋅
q
ln
N
a
N
d
⋅
n
i_GaAs
T
(
)
2
⋅
=
Define a function for the builtin barrier potential
n
i_GaAs
T
(
)
B
GaAs
T
1.5
⋅
exp
E
g_GaAs

2 K
B
⋅
T
⋅
⋅
=
Define functions for the intrinsic carrier concentration
N
a
10
16
cm
3

⋅
=
N
d
10
16
cm
3

⋅
=
Problem 1:
q
1.602 10
19

⋅
coul
⋅
=
B
GaAs
2.1 10
14
⋅
1
cm
3
K
1.5
⋅
⋅
=
E
g_GaAs
1.4 eV
⋅
=
Specify some constants for silicon
K
B
86 10
6

⋅
eV
K
⋅
=
eV
1.602 10
19

⋅
coul
⋅
volt
⋅
=
Define units and constants
ECE 250 HW #2 Solution
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