Homework%205%20Solutions

Homework%205%20Solutions - EE 215 Spring 06 Homework 5...

Info iconThis preview shows pages 1–4. Sign up to view the full content.

View Full Document Right Arrow Icon
EE 215 Spring 06 Homework 5 Solutions 1) Liu problem 10.3 54.7 ° xx 8 . 434 10 ) 4 . 212 ( 2 10 ) 7 . 54 tan( 300 2 10 2 = + = + = + = x W So the correct answer is (2) 435 μ m 2) Liu problem 10.8
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
EE 215 Spring 06 Homework 5 Solutions 3) Liu problem 10.9 4) Liu problem 10.10
Background image of page 2
EE 215 Spring 06 Homework 5 Solutions 5) (a) Run the anisotropic etch simulation for one sided and (b) two sided etching of a <100> wafer in IntelliSuite. (c) What would happen for two sided etching of a <100> wafer if the mask openings are large enough to allow the etch pits formed on either side to intersect each other in the middle of the wafer? Choose suitably large mask openings and simulate this situation. Print out images of each of the
Background image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 4
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 11/21/2008 for the course EE 215 taught by Professor Joelkubby during the Fall '05 term at UCSC.

Page1 / 4

Homework%205%20Solutions - EE 215 Spring 06 Homework 5...

This preview shows document pages 1 - 4. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online