2017 [doi 10.7567_APEX.10.114101] Zhu, Guangrun; Zhang, Kai; Kong, Yuechan; Li, Chuanhao; Lu, Haiy -

2017 [doi 10.7567_APEX.10.114101] Zhu, Guangrun; Zhang, Kai; Kong, Yuechan; Li, Chuanhao; Lu, Haiy -

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Applied Physics Express LETTERS Quaternary InAlGaN barrier high-electron-mobility transistors with f max > 400 GHz To cite this article: Guangrun Zhu et al 2017 Appl. Phys. Express 10 114101 View the article online for updates and enhancements. Related content High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure Farid Medjdoub, Riad Kabouche, Astrid Linge et al. - 1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron- mobility transistors with f T / f max of 41/125 GHz Bin Hou, Xiaohua Ma, Ling Yang et al. - Si-Containing Recessed Ohmic Contacts and 210 GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors Ronghua Wang, Guowang Li, Jai Verma et al. - This content was downloaded from IP address 129.59.95.115 on 27/10/2017 at 15:03
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Quaternary InAlGaN barrier high-electron-mobility transistors with f max > 400 GHz Guangrun Zhu, Kai Zhang * , Yuechan Kong, Chuanhao Li, Haiyan Lu, Xinxin Yu, Zhonghui Li, and Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China * E-mail: haigui.34 @ 163.com Received September 4, 2017; accepted October 10, 2017; published online October 26, 2017 We report a high-frequency GaN high-electron-mobility transistor based on the InAlGaN / AlN / GaN heterostructure. A device with an 8-nm-ultrathin barrier layer and a 50-nm-long gate exhibits a maximum current density of 2.22 A / mm, a peak extrinsic transconductance of 0.97 S / mm, and a low on-resistance R on of 0.94 Ω & mm. Furthermore, an excellent small-signal RF performance is acquired. The device after de-embedding reveals a high current-gain cutoff frequency ( f T ) of 182 GHz and a high power-gain cutoff frequency ( f max ) of 402 GHz simultaneously. To the best of our knowledge, the f max reported in this work is the highest achieved to date in GaN-based HEMTs fabricated by a conventional process. These outstanding performances clearly demonstrate the great potential of an ultrathin quaternary barrier for millimeter-wave power applications. © 2017 The Japan Society of Applied Physics G aN-based high-electron-mobility transistors (HEMTs) have been considered extensively as an alternative to devices based on GaAs or InP, owing to its wide bandgap, high two-dimensional electron gas (2DEG) density, and high carrier mobility, which make it possible to achieve high-frequency operation with a large output power. During the last few decades, the cut-o ff fre- quency of GaN-based HEMTs has undergone rapid enhance- ment with plenty of innovative improvements toward device scaling, such as n + -GaN regrowth, 1 , 2 ) self-aligned-gate (SAG) process, 3 ) and novel alloy materials. 4 ) A conventional AlGaN = GaN heterostructure is not applicable in highly scaled devices, since it cannot maintain the su ciently high aspect ratio required by short-channel e ff ects (SCEs) limitation. To solve this problem, thin barrier materials with strong polar- ization e ff ects induced by high Al composition, such as AlN, InAlN, and InAlGaN have been studied recently to minimize
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