Hw1.1-Chapter 2.docx

# Hw1.1-Chapter 2.docx - EEE-212 Semiconductor Devices and...

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EEE-212 Semiconductor Devices and Modelling - Fall 2017 Homework #1 Deadline: Due in classroom before lecture on 19 October (out of 100 pts.) Part I: Descriptive Questions 1- Explain what the effect of doping on mobility of the carriers is? 2- Derive equations describing resistivity of the intrinsic semiconductor 3- a) For the intrinsic semiconductor mark the correct answer below: 1. p=n=ni 2. p>n, ni>n 3. n>p, n>ni b) Now assume this semiconductor is doped with donors, mark the correct one for that doped semiconductor. 1. p=n=ni 2. p>n, ni>n 3. n>p, n>ni Part II: Problems 1- Find the room-temperature resistivity of an n-type silicon doped with 10
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• Spring '12
• cengizbeşikçi
• 300 K, intrinsic semiconductor, 100 pts, EEE-212 Semiconductor Devices, intrinsic semiconductor mark

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