# Lab 5.doc - Purpose To study the effect of the temperature...

• Lab Report
• 10

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Purpose To study the effect of the temperature on the i D -v D characteristics of a p-n junction diode. Theory The relation between the dc voltage across an ideal p-n junction diode and the corresponding dc diode- current is given by i D = I o *e vD/(nVt) , where I 0 is the reverse saturation current and V T = KT/q and η is the ideality factor. I D is a function of temperature for any given voltage V D , as is I 0 , but not quantified empirically. Procedure 1. Solder two wires (12 inches long) to the two leads of a p-n junction diode. 2. Insert the sphagetti insulation on to the lead wires. 3. Place the diode in the oven. 4. Connect the following circuit. 5. Put the scope in the X-Y mode. Adjust the amplifications/attenuations to get the i D -v D graph on the scope. Trace the graph. Note the horizontal and vertical scales and settings. 6. Put the scope in the Alt-mode. Adjust the amplifications/attenuations to get the wave forms clearly. Trace the two wave forms. Note the vertical scales and settings. 7. Start heating the oven very slowly. Repeat step 5 at 40°C, 80°C, 120°C, and 160°C.

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• Fall '10
• Vahe
• Volt, p-n junction diode, ideality factor

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