Fundamentals of Microelectronics

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Unformatted text preview: 9.7 Let R 2 be the resistance seen looking into the collector of Q 2 . R out = r o 1 + (1 + g m 1 r o 1 ) ( r 1 bardbl R 2 ) Note that this expressoin is maximized as R 2 . This gives us R out,max = r o 1 + (1 + g m 1 r o 1 ) r 1 9.9 R out 1 I C 1 V A V T V A V T V A + V T (Eq. 9.9) = 1 I C 1 V A V T V T = V A I C 1 = r o This resembles Eq. (9.12) because the assumption that V A V T can be equivalently expressed as V A I C V T I C r o r This is the same assumption used in arriving at Eq. (9.12). 9.12 I D = 0 . 5 mA R out = r o 1 + (1 + g m 1 r o 1 ) r o 2 = 1 I D + parenleftBigg 1 + radicalbigg 2 W L n C ox I D 1 I D parenrightBigg 1 I D 50 k . 558 V 1 9.15 (a) V D 1 = V DD I D R D = 1 . 3 V > V G 1 V TH = V b 1 V TH V b 1 < 1 . 7 V (b) V b 1 = 1 . 7 V V GS 1 = V b 1 V X = V TH + radicalBigg 2 I D ( W L ) 1 n C ox = 0 . 824 V V X = . 876 V 9.16 (a) Looking down from the source of M 1 , we see an equivalent resistance of...
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This note was uploaded on 05/03/2009 for the course ECSE 2050 taught by Professor Monahella during the Spring '08 term at Rensselaer Polytechnic Institute.

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ch09sol - 9.7 Let R 2 be the resistance seen looking into...

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