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Performance the effect of variation the wavelength of a high power diode laser an end- pumped laser system . Jassim Mohammed Jassim, Babylon University, Babylon University Yaseen Hasan Kadhim Ahmed Kadem Kodeary College of Science for Woman, College of Science Abstract The present work is a theoretical and experimental study on the temperature effect on the power output of an end- pumped Nd:YAG laser system, using a (GaAs) laser diode as a pumping source . The heating effect due to the current injection through the semiconductor laser causes a shift (200-235 mA) in the threshold current for temperature variation (5-35 C o ) ,These variation ,also ,led to a spectral shift ( 800- 809 nm) in the diode laser output, that is , a (0.25-0.3 nm/ C o ) . The consequences of these changes on the Nd:YAG laser output power was an increase in the system power ( 0.62- 8.5 mW) for the temperature changes (5-35 C o ) .The experimental results fairly high agreement with the theoretical calculations . هصهلخلا ةيبيرجتو ةيرظن ةسارد ثحبلا اذه يف مت ةساردل ةبلصلا ةلاحلا رزيل ةموظنم نم ةجراخلا ةردقلا ىلع ةرارحلا ة ة جرد ر ة يثأتل كاي مويميدنلا , رزيل ةطساوب يلوط لكشب خوخضملا ) دويادلا مويلاكلا تاخنيرز . ( لا نأ نيبت يرارحلا ريثأت نم جتانلا رايتلا نقح ببستت تلصوملا هابشأ رزيل ربع ف فيحزت ة ة بتعلا ر ة ايت ي نم ) 200 - 235 mA ( ريغتل ةرارحلا ة جرد نم ) 5 - 35 C o ( نأ ذه ا ريغتلا ىلإ ىد د أ ا ضيأ فيحزت يفيط نم ) 800 - 809 nm ( جرخ يف رزيل دويادلا , ةبسنب ) 0.25 - 0.3 nm/ C o ( . ةردق ىلع ريغتلا اذه جئاتن نم ةموظنملا ةردق يف ةدايز دجو كاي مويميدنلا رزيل جرخ ) 0.62 - 8.5 mW ( نم ةرارحلا ةجرد ريغتب ) 5 - 35 C o ( . ةيبيرجتلا جئاتنلا . ةيرظنلا تاباسحلا عم ريبك دح ىلإ قباطتت 1- Introduction Laser diodes have long operating lifetimes, on the order of ten thousand hours, provided they are handled with care and operated with proper driver circuits. A number of reasons including current surge, electrostatic discharge, and temperature surge contribute to the reduction of a laser diode's lifetime or to its complete failure. The temperature to characterizes the sensitivity of the laser's threshold current to temperature, while the temperature characterizes the sensitivity of the laser's differential slope efficiency to temperature. Thermal characterization also gives insight into device functioning and points the way toward better laser design energy transitions are coupled to lattice vibrational modes, device performance is often closely tied to device heating. For semiconductor laser diodes in particular such critical parameters as wavelength, threshold current, quantum efficiency, and device lifetime are all strongly dependent on temperature [ Yi, 1995 ].
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