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Unformatted text preview: EAMOSPEC COMPLEMENTARY SILICON PLASTIC NPN PNP
POWER TRANSISTORS
designed for use in general purpose power amplifier and switching TIP31 TIP32
applications. TIP31 A TIP32A
FEATURES: TIP31 B TIP3ZB
* Collector-Emitter Sustaining Voltage - TIP31 C TIP32C Vcsomu): 4°V(Mifl)- TIP31,T|P32
60V(Min)- T|P31A,TIP32A
8°V(Min)- TIP31B,TIP3ZB
100V(Min)-TIP31C,TIP3ZC 3 AMPERE * Collector-Emitter Saturation Voltage- Vcfiat)=1.2V(Max)@lc= 3.0 A COMPLEMENTARY S'L'CON . - . _ . = POWER TRANSISTORS
Current Gam-Bandwudth Product fr'3-0 MHz (Mln)@ Ic 500 mA 40 _ 10° VOLTS
MAXIMUM RATINGS 40 WATTS OO TIP31 TIP31A TIP31B TIP31
TIP32 TIP32A TIPSZB TIP32 Characteristic Collector—Emitter Voltage Vcao
Collector-Base Voltage Vcso
Emitter-Base Voltage Van Collector Current - Continuous
- Peak Haaalllllll Total Power DissipationQTc= 25°C
Derate above 25°C Operating and Storage Junction T J,
Temperature Range T
m -65 to +150 2 THERMAL CHARACTERISTICS
PIN LEASE
mm m mum
3.BIII'ITER
Thermal Resistance Junction to Case w °CNV 4.COLLECTOR(cASE) ml- FIGURE -1 POWER DERATING PD , POWER DISSIPATIONMA‘ITS) IIIIIIII --
--
--
n-
n-
-L‘
--‘_
--“ OZF‘XL-ImmmUOmib 75 100 125 150
Tc , TEMPERATURE(°C) TIP31. TIP31A, TIP31B, TIP31C 'NPN I IP32, TlP32A, TIP3ZB. TIP3ZC PNP ELFCTRICAL CFARALTERISTICS = 25°C unless u herwise noted ) [ Characteristic 1 Symbol l Min ‘ Max Unit OFF CHARACTERISTICS , {Collector-Emitter Sustaining Voltage“) TIP31,T|P32 i VCEOMs) '— 40—]— , ( lo: 30 mA, .3: 0) TIP31A, TIP32A
T|P31 B, TIPBZB 80—]—
TIPSiC,TlP3ZC Collector Cutoff Current I Nos: 30 V, IB = 0) TIP31,TIP32,TIP31A,TIP32A (VCE= 60V, I:= 0) TiP31B,TiP323,TIP31C,TlP32C Collector Cutoff Current (Va: 40 v, vn= 0) TIP31,TIP32
I (Va: so v v“= 0) TIP31A,TIP32A
| (Va: 80 v, v“: o) T|P31B,TIP3ZB
i (Veg 100 v, vfl= a ) TIP31C,TIP3ZC iEmitter Cutoff Current
I (V53: 5.0 V, |c= 0) ON CHARACTERISTICS (1)
-'-~~——_——— ——l—'-—-—I—5—l—
DC Current Gain ———l—hFE I
’(Ic =1 .,0A VCE=4.OV)
(lc=3.OAVcE=4.0V) 10
Collector-Emitter Saturation Voltag—e VCE(sat) i
(Ic =3.,0AIB =375 mA) Base-Emitter On Voltage (Ic =3.o A, VCE= 40 V) DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product (2) 3.0 (lc?500mA,VCE=10V,fTEST=1MHz) Small Signal Current Gain
(lc=500mA,VCE=10V,f=1 kHz) (1) Pulse Test: Pulse width § 300 Its , Duty Cycle § 2.0 ‘36 In DfTEST TIP31,TIP3‘§A,TIP318,?!P31C NPI‘H TIP32,“P32A,TIP3ZB,TIP3ZC PNP FIG-3 TURN-ON TEME FIGURE 2 — SWITCHING TIME EQUIVALENT CIRCUIT TURN-0N PULSE v," 5 r _ ~ ~\: Vin score
Vemnm "-l i-—l= APPROX ,__—‘l '3 l‘” Cid <<Ceh
"‘ V l l l n <10 "5
l ' l nm<rz<boflus ADV ‘
Vln— |__ ._ _:_k l3<‘5n;
l l
'-l 12 l—- nurv crummy, rumour PULSE ”PR“ ‘9'" U
n; and ac vmm TD canmmssmao cunnsur LEVELS. lc . SOLLECTOR CURRENT (AMP) FIG—4 DC CURRENT GAIN FIGS TURN-OFF TIME ' wvccawv ' i-
i “J that I
. _ ., J
'om 0.05 'm 32 3.3 0.5 1.0 21) 3,0 0.03 01 0.2 0,3 0.5 0.7 112 2.0 3.0 I: , COLLECTOR CURRENT (M) I: I COLLECTGR CURRENT (MP) A . LTME (us) hr: . DC CURRENT GAIN T FIG-6 ACTIVE REGION SAFE OPERATiNG AREA There are two limitation on the power handling ability
of a transistorzaverage junction temperature and second
breakdown safe operating area curves indicate lc-VCE
limits of the transistor that must be observed for reliable
operation i.e.. the transistor must not be subjected to
greater dissipation than curves indicate. The data of FIG-6 cum is base on T4m=150 °C; Tc is
variable depending on power level. second breakdown
pulse limits are valid for duty cycles to 10% provided
TJPK, _<_150°C,At high case temperatures_thermal limitation
will reduce the power that can be handled to values less
than the limitations imposed by second breakdown K: , COLLECTOR CURRENT (AMP) ‘5» w 20 so 100
vcs , COLLECTOR sun-ran VOLTAGE (VOLTS) T|P31,TIP31A,TIP31B,TIP31C NPN I TlP32,TIP32A,TIP3ZB,TIP32C PNP Vc: . COLLECTOR EMHTER VOLTAGE (VOLTS) FIG-7 COLLECTOR SATURATION REGION FIG-8 CAPACITANCES
300
200
‘5,
I.“
g 100
'3
E 70
o_
0
50
30
1.0 2.0 5.0 10 20 50 100 200 5001000 0.1 0.2 0.5 1 2 5 10 20 40
1., BASE CURRENT (mA) VmREVERSE VOLTAGENOLTS)
1.4
12.
A 1.0
(I,
g
2. 0.0
'8
E 0.6
9
> 0.4
0.2 lc . COLLECTOR CURRENT (M) 0 0.03 0.05 0.1 0.2 0.5 1.0 2.0 3.0
IC . COLLECTOR CURRENT (AMP) FIG—10 COLLECTOR CUT-OFF REGION
VCE-SW
TJ-150°c 100°C REVERSE FORWARD 25°C -0.4 -0.3 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 V3: . BASE-EMITTER VOLTAGE (VOLTS) ...
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- Spring '12
- jason
- Integrated Circuit, Transistor, Volt, Bipolar junction transistor, Ampere
