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Electrical Engineering 40 - Spring 2000 - King - Midterm2

# Electrical Engineering 40 - Spring 2000 - King - Midterm2 -...

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Page 1 UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EECS 40 Spring 2000 Introduction to Microelectronic Devices Prof. King MIDTERM EXAMINATION #2 April 6, 2000 Time allotted: 80 minutes NAME: ______________________________________ ____________________ (print) Last First Signature STUDENT ID#:____________________ 1. This is a CLOSED BOOK EXAM . However, you may use 2 pages of notes and a calculator. 2. Show your work on this exam. MAKE YOUR METHODS CLEAR TO THE GRADER. 3. Write your answers clearly in the spaces (lines, boxes or plots) provided. Numerical answers must be accurate to within 10% unless otherwise noted. 4. Remember to specify the units on answers whenever appropriate. 5. Do not unstaple the pages of this exam. SCORE: 1 __________ / 20 2 __________ / 30 3 __________ / 25 4 __________ / 25 Total: __________ / 100

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EECS40 Midterm Exam #2 Spring 2000 Page 2 Physical Constants Description Symbol Value Electronic charge q 1.602 x 10 -19 C Permittivity of vacuum ε o 8.854 x 10 -14 F/cm Boltzmann’s constant k 8.62 x 10 -5 eV/K Thermal voltage at 300K kT/q 0.026 V Properties of Silicon at 300K Description Symbol Value Thermal velocity v th 10 7 cm/s Relative permittivity ε r 11.7 Intrinsic carrier density n i 1.45 x 10 10 cm -3 Electron and Hole Mobilities in Silicon at 300K Conversion Factors 1 eV = 1.602 x 10 -19 J 1 µ m = 10 -4 cm = 10 -6 m Farad = Coulomb / Volt Henry = Volt / (Ampere/second) Watt = Volt x Ampere Joule = Watt x second electron mobility hole mobility
EECS40 Midterm Exam #2 Spring 2000 Page 3 Problem 1 Circuits with Dependent Sources [20 points] a) Find V o . [4 pts] V o = __________ V b) In the circuit below, the independent source values and resistances are known.

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Electrical Engineering 40 - Spring 2000 - King - Midterm2 -...

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