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Electrical Engineering 105 - Fall 1995 - Boser - Midterm 1

Electrical Engineering 105 - Fall 1995 - Boser - Midterm 1

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EE105, Midterm 1, Fall 1995 EE105 Fall, 1995 Midterm 1 B.E. Boser Device Parameters: (use in all problems) NMOS PMOS threshold voltage 0.7V -0.7V gate oxide 2fF/um^2 2fF/um^2 mobility 400 cm^2/V-s 150 cm^2 / V-s Problem #1 Doped Silicon (20 points) A sample of Boron doped Silicon is 1 cm long and has cross-section with A=2mm^2 Paramaters: u sub n = 400 cm^2/V-s, u sub p = 150 cm^2 / V-s (a) [5 points] Is the sample n-type or p-type? (b) [5 points] If a 5V battery is connected across the Silicon sample, a current of 3mA flows. What is the majority carrier (doping) concentration of the sample? (c) [5 points] With the voltage source removed, what are the electron and hole concentration in the Silicon sample at room temperature? (d) [5 points] What concentration of Arsenic doping is needed to get a current of 100mA when the experiment described in part (b) is repeated? Problem #2 Inverter with PMOS current source load (30 points) file:///C|/Documents%20and%20Settings/Jason%20Raft...0-%20Fall%201995%20-%20Boser%20-%20Midterm%201.htm (1 of 4)1/27/2007 4:43:33 PM
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EE105, Midterm 1, Fall 1995 You are a supervisor at SmartLogic Inc. One of your engineers has invented the "new" inverter shown
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