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Electrical Engineering 141 - Fall 1995 - Rabaey - Final

Electrical Engineering 141 - Fall 1995 - Rabaey - Final -...

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EECS 141: FINAL FALL 1995 1 University of California College of Engineering Department of Electrical Engineering and Computer Science J. M. Rabaey 203 McLaughlin MWF 10:11am [email protected] EECS 141: FINAL FALL 1995 For all problems, you can assume the following transistor parameters: NMOS: V Tn = 0.75V, k’ n = 20 μ A/V 2 , λ = 0, γ = 0.5 V 1/2 , 2 Φ F = -0.6V PMOS: V Tp = -0.75V, k’ p = 7 μ A/V 2 , λ = 0, γ = 0.5 V 1/2 , 2 Φ F = -0.6V Bipolar NPN : β F = 100, V BE(on) = 0.7V, V BE(sat) = 0.8V, V CE(sat) = 0.1V Wiring: Aluminum: C parallel-plate = 0.03 fF/ μ m 2 ; C fringe = 0.045 fF/ μ m, R sheet = 0.05 /o, L alum = 0.4 pH/ μ m Polysilicon: C parallel-plate = 0.06 fF/ μ m 2 ; C fringe = 0.045 fF/ μ m, R sheet = 10 /o For all problems, you maty assume that the transistor lengths indicated are the effective lengths (L eff ) or, equivalently, that LD = 0. All questions are worth 15 points. NAME Last First GRAD/UNDERGRAD 1 2 3 4 5 6 7 Total
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