quiz2_2003_soln - Name SULufl 0N5 Rensselaer Polytechnic...

Info iconThis preview shows pages 1–9. Sign up to view the full content.

View Full Document Right Arrow Icon
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 2
Background image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 4
Background image of page 5

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 6
Background image of page 7

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 8
Background image of page 9
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: Name SULufl 0N5 Rensselaer Polytechnic Institute Department of Electrical, Computer and Systems Engineering ECSE-ZOSO Spring 2003 Quiz 2 Print your name on every page and show all work to ensure partial credit. Problem 1 (20 points) Problem 2 (30 points) Problem 3 (20 points) Problem 4 (30 points) Total Name Song mus Problem 1: Consider the JFET circuit shown below. Assume that the device parameters are I =10mAandV =-4V. Dss P ‘HS'V Q‘ '1 E Herc.— a) The output characteristics for the JFET are shown below. Draw a DC load line on this plot and indicate the bias point where VDS = 7.5 V. Be sure to indicate the ID for the bias point. i1) (IDA) 10 Name SK, 5441'! 0M3 b) Determine the values of R1 and R2 which produce a bias point of VDS = 7.5 V. Make RIHRZ = 1 MO __ - lass _ )0 >_ _ (.y)l(v&$+q) = '2 5 ‘3 “4/6.; 5 “34/ s (/3 = (:SmAMAM = {v R; 23%,: S-a=3\/ : K,m,(’s> FEB; 09— mm “ 543%} - Name out/Tl AM“ Problem 2: I Consider the B] T amplifier in the circuit below. Assume that the BJT has VBE = 0.7 V in the active mode and B = 100 and VA = 50 V. Assume that the capacitors are very large. V33 Awarov \OKIL. a) Determine the value of VBB that produces IC = 1 mA. Verify that the BJT is in the active mode with IC = 1 mA. .. l - 1.3. -L£=lmP\ ‘6 film“ ) .EB- Hm = IO/AA l“ E:(Stcx1mm= 5V Vg=S‘l'.'—l v ~91 25:”: 'OV‘M “‘9 VBB‘ 477V V66: 30— rostrum - Shown: sv >..t yum b) Determine the small signal parameters for the BJT and draw the complete small signal model for the amplifier, indicating the value for all components. Assume VT = 25 mV. t ngv _ _ _———'— : ‘5 (W'- g lG’uept J 1w“: J”; a .MA ‘(0 mA/V VT” .3va r0: Ki- 2:9“ 5’0!ch Io Imp! Name SOLUWOM‘S c) Calculate the small signal gain, vo/vi, when RL = 00 . Note that vi is the small signal voltage at the base of the transistor. You must derive your result from the small signal model above. N0 = qmwm (\m'llgom (Vbe ‘ “’6 z.) Mo = *.O‘~( (8.33% M d) Calculate the input resistance, R, as indicated on the schematic. You must derive your result from the small signal model above. RC = look ll 9.5L UI Name Saga/z] 9N: e) Calculate the output resistance, R0, as indicated on the schematic diagram. You must derive your result from the small signal model above. Ra: toKuS‘csK a 233:“; 0 Use your answers from (c), (d) and (e) to compute the input and output loading factors and the overall gain, vo/vs, when RL = 10 k9 Name Sam/n (5 M3 Problem 3: The MOSFET in the circuit drawn below has k’(W/L) = 2 mA/V2 and VT = 2 V. The BJT has VBE = 0.7 V in the active mode, [3 = 50 and VT = 25 mV. +|OV JED: 3.34 \mD. = #05“? m“ ‘ Zlk’(w/z.)(vg$._%_)a- lvkgvfi ‘ 3:22 1;.) V“: ans) tw <VT V6: Vow Vs -‘ 5-“H-MB = cmw ISQK _ V .: ’ __ _ 6 Mamfi‘ (mv) = 4,.v3v an) R1- 83. 5k b) Find the range of R2 values for which Q] is in the current saturation mode and V0 = 3_V. Vb: > Vang-VT r ATE—D... =,13\/ v5: 3.1Va VB: \0— 1:935 V95 '1 AIG" R;( LOS‘QMR") ’37? > .‘73 => Problem 4: The MOSFET in the circuit below has k’(W/L) = 4 mA/Vz, VT = 2 V and VA = 50 V Assume that the capacitors are very large. -+ tov a) Find the small signal parameters for the MOSFET and draw the small signal model labelin all components. j g :5 A v ’ ~1:3, m gm— “at; (w/QIX3 '-’ 6.5 mMV r0: .5”... C mg : IDKJZ... b) Derive the voltage gain, vo/vi, from the small signal model. “" V4 3CD No 4. gm lNL' Ickluok SM Name SULUS 19193 c) Derive the input resistance, Ri, from the small signal model. . , N4; . a PC ' 4" c a ’ [Vt—No w M" + (3/.SN") : 33.5” ‘ S'M " sh 5“ ‘ d) Derive the output resistance, R0, from the small signal model. R0: i ...
View Full Document

This note was uploaded on 05/18/2009 for the course ECSE 2050 taught by Professor Monahella during the Spring '08 term at Rensselaer Polytechnic Institute.

Page1 / 9

quiz2_2003_soln - Name SULufl 0N5 Rensselaer Polytechnic...

This preview shows document pages 1 - 9. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online