hw4 text-scan

hw4 text-scan - 282 Chapter 4 BipolarJunction Transistors...

Info iconThis preview shows pages 1–5. Sign up to view the full content.

View Full Document Right Arrow Icon
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 2
Background image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 4
Background image of page 5
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: 282 Chapter 4 BipolarJunction Transistors operation in the active region. Repeat for the saturation region. Repeat for the cutoff region. 4.27. Repeat Problem 4.26, for a pnp transistor. . 4.28. Determine the region of operation for a room— temperature silicon npn transistor that has 18 = 100 if (a) V5}; = 10V and 13 = ZOMA; [C = [B = 0; (c) VCE = 3V and V3,; = 0.4V; (11) Ic = 1mA and 13 = flA. 4.29. Determine the region of operation for a room- temperature silicon pnp transistor that has fl = 100 if (a) VCE = —5V and VBE = —-0.3V; [C = 10mA and 13 = 1mA; (c) 13 = 0.05 mA and VCE = —5 V. Section 4.5: Large-Signal DC Analysis of BJT Circuits 4.30. Briefly discuss the procedure for performing a dc analysis of a BJT circuit using the large-signal circuit models. 4.31. Draw the fixed-base bias circuit. What is the principal reason that this circuit is unsuitable for the mass production of amplifier circuits? 4.32. Draw the four-resistor bias circuit for the BJT. Give the rule—of-thumb design guidelines for this circuit. 4.33. Use the large—signal models for the transistors illustrated in Figure 4.19 to find IC and VCE for the circuits of Figure P4.33. Assume that [3 = 100. Repeat for 13 = 300 and compare the results for both values. +20V +20V +15V +15V 1 M9 4.7 m 470 m 6.8 m 1 MD J- (a) =— -15 V (b) ' +15 v +15 v +15 v 1 M9 10““ 470 kQ 220 k9. 1 m —15 V =- -: =- (c) (d) Figure P4.33 4.34. Find I and V in the circuits shown in Figure P434. F0 all transistors, assume that 13 = 100 and IV”! : 0.7 in both the active and saturation regions. Repeat for ,3 = 300. 1 +10V +10V 2.7 kg ll v 390 m l1 ~- 22 k9 10 m i (a) (M +15 V +15V +5 v .L, —15 v 15 M9 92 1m 1m QI l, + :1 1m (6) (d) Figure P4.34 4.35. Consider the circuit displayed in Figure P435. A Q—point value for IC between a minimum of 4 mA and a maximum of 5 mA is required. Assume constant resistor values. and suppose that [3 ranges from 100 to 300. It is desired that R 3 have the largest possible value while meeting the other constraints. Find _7 the values of RB and R E. The resistors in this problem are not ’ required to be nominal values. +15 V 1 k9 Rs VBEQ = 0.7 v wt:— Figure P4.35 4.36. Consider the four—resistor bias network of Figure 4.283 VCC = R1 = R2 = RC = awvmm‘\«uanrwr>l~3*fl'/Mrkumr«:gv,~wfW’MWWV.W,_‘NA < ’ t r H ‘ ’ V ’ ’ w... ...,«..m. u . M; 7m”. . m. P434~ F0 2R5 = 4.7 kSZ. Suppose that ,8 ranges from 50 to 200, —— 0.7 in both 0.7 V, and the resistors have a tolerance of i5%. Find = 300. aximum and minimum values of Ic. HOV ,‘ Consider the circuit shown in Figure P437. Find R, and a bias point of V55 2 5V and IC : 2mA is required. '7 m ‘t are the closest 5%-tolerance nominal values for R1 and Figure P4.37 Find 1c and VCE in the circuit of Figure P438. +15 V 35. A Q-po I maximum of s, and suppmé , ‘ RB have the _ nstraints. Find] oblem are not j Figure P438 . Four-resistor bias circuit design. Suppose that VCC = "V, RC = 1 k9, and a Q-point of ICQ E 5 mA is desired. The Wtor has fl ranging from 50 to 150. Design a four-resistor !_ circuit. Use standard 5%-tolerance resistor values. Many third of the supply voltage is dropped across RC, one-third across transistor (VCE), and one-third across R E. 'on 4.6: Small-Signal Equivalent 7V A certain npn silicon transistor at room temperature [3 = 100. Find the corresponding values of gm and r,r if Chapter 4 Problems 283 ICQ = lmA, 0.1mA, and luA. Assume that the device is operating in the active region. Section 4.7: The Common-Emitter Amplifier 4.43. Why are coupling capacitors often used to connect the signal source and the load to discrete amplifier circuits? Should coupling capacitors be used if it is necessary to amplify dc signals? Explain. 4.44. Draw the circuit diagram of a common-emitter amplifier circuit that uses the four—resistor biasing network. Include a signal source and a load resistance. 4.45. Consider the common-emitter amplifier of Figure P445. Draw the dc circuit and find ICQ. Find the value of r”. Then calculate values for A”, Aw, Z", A;, G, and Zn. Assume that the circuit is operating in the midband region for which the coupling and bypass capacitors are short circuits. +15 V +15 V s=|oo o.7v VBEQ = Figure [MAS 4.46. Repeat Problem 4.45 if all resistance values, including R. and RL, are increased in value by a factor of 100. If you have also worked Problem 4.45, prepare a table comparing the results for the low-impedance amplifier with those for the high-impedance amplifier. (Comment: When we consider the high-frequency response of these circuits, we will find that the gain of the high-impedance circuit falls off at lower frequencies than the gain of the low-impedance circuit does. Thus, if we want constant gain to extend to very high frequencies, we should use the low-impedance circuit.) Section 4.8: The Emitter Follower 4.47. Draw the circuit diagram of a discrete emitter follower. 4.48. For a small-signal midband analysis of an amplifier, with what do we replace the coupling capacitors? Dc voltage sources? Dc current sources? Very large inductors? 284 Chapter 4 Bipolarjunction Transistors -follower amplifier of Figure P451. d ICQ. Find the value of 1-,,_ Then Aim, Zin, Aia Giand Z“. 4.51. Consider the emitter 4.49. Draw the small-signal equi illustrated in Figure P4.49. Draw the dc circuit and tin ' calculate midband values for A” , t +15 V +15 V valent circuits for the circuits emitter amplifier with unbypassed emitter Figure P4.51 4.52. Repeat Problem 4.51 if all resistance values, including RJ , A and R L , are increased in value by a factor of 100. Prepare a C2 i table comparing the results for the low—impedance amplifier, * with those for the high—impedance amplifier. + 4.53. Draw the small-signal equivalent circuit for the amplifier “ shown in Figure P453. Derive expressions for the voltage gain ,5; and input impedance in terms of the resistor values, r,,, and fi. 3" "' Assume that the capacitors are short circuits for the Signals (a) Common- resistor emitter follower using a dc current (b) Variation of the source for biasing +Vcc Figure P453 A”, and Zn for the circuit 5 I , v, “in — 4.54. Find the values of ICQ , rn , _ j: V of Problem 4.53 if Vcc = 15V, [8 = 100, VBEQ = 0.7, - ‘ ' ‘ CC RB = 270m, RC = 1m, R5 = 100:2, and RL = 1kg. (c) Variation of the common—base amplifier [assume that Repeat for R E = 0 and prepare a table comparing the resulis the mi?'freque"cy wake (RFC) is mops“ circuit for 4.55. Find an expression for the output impedance of the the 3‘: s‘gnals] amplifier displayed in Figure P453. Figure P4.49 Amplifier circuits 4.56. Draw the small-signal equivalent circuit of the Circui‘ I shown in Figure P456, and derive expressmns for the “19m” in. Assume that the capacitors are _ impedance and voltage ga edure for short circuits for the signals describe the small—signal analysis proc 4.50. Briefly of an amplifier. finding the output resistance Chapter 4 Problems 2 85 +VCC +VCC 4.59. Consider the common-emitter amplifier illustrated in Figure P459. The ac source in series with the dc supply represents power~supply hum. (a) Assume that a large bypass capacitance is connected between points A and E. Draw the small-signal equivalent circuit, including the hum source. Solve for Alum, = va/vhum, assuming that v, = 0. (b) Now consider connecting the emitter bypass capacitor from point E to ground, and again find Ahm. Notice that if vhum = 0, the two equivalent circuits are identical, so they perform equally as far as the source signal v; is concerned. Which option is best for the connection of the bypass capacitor? Why? r of Figure P451 Ialue of r,,, Thel; \i , G, and 20. [5:100 VHE 20.7v Figure P4.56 m. Consider the circuit of Figure P456 with Vcc = 15 V, x1: 10kg, R2 = 101:9, R3 : 100kS'Z, R5 = 10kg, RL = 4.7 k9. Assume a transistor having [9 = 200 and = 0.7 V. Evaluate the expressions found in Problem 4.56 ’ input impedance and voltage gain. ‘ Consider the common-emitter amplifier circuits displayed gure P458. The ac sources shown in series with the dc y sources represent power-supply hum. Draw the small- equivalent circuits Be sure to include the burn source in model. Notice that if mm, = 0, the two equivalent circuits identical. Find an expression for the voltage gain va/vin mm = 0. Then set via = 0 and solve for Ahum = va/vh.ml ‘ 'ach circuit. Evaluate the gain values for Vcc = 15V, I m = 0.7V, fl = 100, R3 = IMO, and RC = 4.71:9. “Which of these circuits is preferable? Why? alues, including R, )f 100. Prepare a edance amplifier .it for the amplifief or the voltage gain I q ' values, rJ1 , andfl '. for the signals Figure P4.59 4.60. Find the value of VCEQ for the circuit of Figure P460. Draw the small-signal equivalent circuit and find an expression for the small-signal output impedance Zn in terms of [3 , r,r , R1 , and R2. Evaluate 20 for the values shown in the figure. +15 V {in for the circuit VBEQ = 07’ VBEQ=O.7V and RL fi=100 paring the results pedance of the ‘ uit of the circuit ans for the inpul the capacitors ' Figure P458 Figure P4.60 ansistors 286 Chapter 4 Bipolarjunction Tr 4.61. Consider the voltage—reference circuits illustrated in Figure P461. The dynamic small-signal resistance of each 100 S2. Find the dc output voltage of each Zener diode is rd = nt circuit, and derive an circuit. Draw the small-signal equivale the output impedance of each circuit. Evaluate ameters expression for s for the resistances and transistor par the expression shown. HSV +UV R VBEQ = 0.7 v R 10 k9 fl = 200 Va + V,, + <e—4 55v A_ ‘9. 5.1 V_ 1 — RE 1 kg 1 Z” Figure P4.61 Section 4.9: The BJT as a Digital Logic Switch f an RTL inverter. In what 4.62. Draw the circuit diagram o te if the input is high? region is the transistor intended to opera Low? it diagram of an RTL NOR gate. 4.63. Draw the circu 4.64. Consider the transfer characteristic of the RTL inverter shown in Figure 4.43. Sketch the transfer characteristic to scale for the values shown in Figure P464. Sketch the output voltage v0 (t) to scale versus time if (a) v-m(t) = 2.7 sin(20007r t); (b) vin(t) = 2.7 + sin(20007rt); (c) vin(t) = 2.7 + 5 sin(20007tt). (d) For which of the previous parts does the RTL inverter behave as a linear amplifier for the ac signal? +12V RC 2.2 m ‘4; R ,8 = 30 B + 22 k9 yin“) VBE = 0.7 V E i _ t E _ Figure P464 4.65. Consider the that we require the minimum 0 in the cutoff region to be V0” number of driven gates (i.e., the fa Assume that the driven gates those of the RTL inverter. 4.66. If Vin = 6V for the circuit of minimum value of [9 to ensure that the transis 4.67. If VOL (i.e., the output voltage in the low logic state)*~is required to be less than 0.5 V for the circuit of Figure P464, what is the maximum fan-out allowed (i.e., the maximu number of inputs that can be connected) if the driven gates . also RTL circuits? RTL inverter of Figure P464. Assuming _ utput voltage with the transistor = 6V, what is the maximum n—out) that can be connected? , have input circuits identical to"? _ ‘1 ...
View Full Document

Page1 / 5

hw4 text-scan - 282 Chapter 4 BipolarJunction Transistors...

This preview shows document pages 1 - 5. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online