ICMNE-2012 SCIENTIFIC PROGRAM Oral Sessions Monday October...

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ICMNE-2012 SCIENTIFIC PROGRAM Oral Sessions Monday, October 1 st , 2012___________________________________________ 9.00 - …Registration & Accommodation 13.00-14.00 Lunch Conference Hall Special Session. Presentations of Hi-Tech Companies 16.00 S1-01 SemiTEq technological equipment for nanoelectronics . S.I. Petrov 1 , A.N. Alexeev 1 , D.M. Krasovitsky 2 , V.P. Chaly 2 . 1. SemiTEq JSC, Saint-Petersburg, Russia. 2. Svetlana-Rost JSC, Saint-Petersburg, Russia . 16.20 S1-02 Structural diagnostics, elemental and characteristic analysis of modern micro- and nanosystems using analytical SEM/FIB tools. A. Tagachenkov 1 , E. Zenova 1 , Y. Anufriev 1 , V. Dubrovinskiy 2 . 1. Institute of Nanotechnology of Microelectronics, Russian Academy of Sciences, Moscow, Russia. 2. JSC "NPO Sernia", Moscow, Russia . 16.40 S1-03 Ultra High Resolution AFM Imaging . M. Minin . INTERTECH Corp., Moscow, Russia . 17.00 S1-04 Oxford Instruments Plasma Technology equipment for the micro- and nano- engineering of materials for semiconductor, optoelectronics, MEMS and other applications . K. Kuvaev, A. Krynin . Technoinfo Limited, Moscow, Russia . 17.20 S1-05 Novel Vion Plasma FIB system for nano- and micro- electronics application by FEI Company . A. Poletaev, I. Bredikhin . Technoinfo Limited, Moscow, Russia . 17.40 S1-06 Modern semiconductor equipment for metrology and failure analysis by Hitachi High Technologies. E. Kremer . JSC InterLab, Moscow, Russia . 18.00 Welcome Party 19.00 Dinner Tuesday, October 2 nd , 2012___________________________________________ 8.15 Breakfast Conference Hall 8.50. WELCOME REMARKS E.P. Velikhov, Conference Chair, RSC “Kurchatov Institute”, Moscow A.A. Orlikovsky, Program Committee Chair, IPT RAS, Moscow
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Plenary Session I Session Chairman: Vladimir Lukichev, Institute of Physics and Technology, RAS, Russia 9.00 L1-01 INVITED: New materials and structures in future ULSI generation. A. Orlikovsky, V. Vyurkov . Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia . 9.40 L1-02 INVITED: New devices and materials for ultra low power operation. F. Balestra . Sinano Institute, IMEP-Minatec (CNRS-Grenoble INP, UJF), France . 10.20 L1-03 INVITED: SiGe and Ge: selective epitaxial growth and application in advanced MOS devices. A. Hikavyy , B. Vincent, W. Vanherle, J. Dekoster, L. Witters, H. Bender, A. Thean, R. Loo. IMEC, Leuven, Belgium. 11.00 L1-04 INVITED: Bumpless interconnects technology for wafer-based three-dimensional integration (3DI). T. Ohba . Institute of Engineering Innovation, Graduate School of Engineering, The University of Tokyo. 11.40-12.00 Coffee break. Winter garden Conference Hall Plenary Session II. Quantum Informatics I Session Chairman: Vladimir Lukichev, Institute of Physics and Technology, RAS, Russia 12.00 qL-01 INVITED: Dressed state amplification by a superconducting qubit. G. Oelsner a , P. Macha a , E. Ilichev a , U. Huebner a , H.-G. Meyer a , M. Grajcar b , O. Astafiev c . a Institute of Photonic Technology, Jena, Germany. b Department of Experimental Physics, Comenius University, Bratislava, Slovakia, c NEC Nano Electronics Research Laboratories. Tsukuba, Ibaraki, Japan .
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