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WhatsApp Image 2019-03-17 at 21.17.10.jpeg - GEFORCE(Intel...

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Unformatted text preview: GEFORCE (Intel YOU CORK O YOGASZ a-1) vacancy un occapred introducedl equilibrium with point heat of radiation donege b) Line Defects ( Dislocations ) Cone dimensional imperfection con certialsof uacaney Associated witn mechanical deformation + affects coker, conductivity and diffukn a-2)interstitial's b-1) Edtje dislocation -, dislocation line and burgersvector b-2) Serew dislocation -2 " an atin occupymy an uncecupred repior prallet introdutee stram (hence stress Burgers veets - tuo identifying featut's -1, burgers uecker , dislocation en-e_ Thee are certain interstitial sites available ( octonediral , tetrahedron ) displacement vector (found win a stepwise close loop-) Q-3) substthetrona furre - Bothary rules for simple mixty Dislocation motion requires successive bumpary of a half plae of atorres . Hhe 1. atamrc radius 2d015 2. similce electrongathuity - Sheor forces( mechanic) ae necessary to create and move dulocations 3 same crystal structure for me-tats Dislocateor line moves under the action of applied shoor stress 4. sare ustence. - bonds across the slippin plore de broken and remcole Lin ionic crystals charge neutrally mist be protectedt; Since the bonds around t dislocation are are strameal they are easily brown and re-maple 50 -, Schottty no Frenkel " for easier slip lcloser paeked , dense planes orot directly For moderate applied electr if foreim atons are incorporated into the crystal lattice are preferredt. proportional to the held L' solter soul ins Lavols) Moetrix atoms -2 solvent impurity atoms are caued - solute ofslocatun carry on stress onol stram -freldy which con act like where the propan supplicity. we av namnets to other defects overall electric In purely So ization: BY Point delet's affect propertres of materials, 23destitutiny in semiconductors increase the conductivity. c) Planor Defects "i't afkct's metry points, color Gram Bandaries -1 two orientationrol planes jom defects increase with Temperature and decreally I small ogle gran toindores (e List) -, come offdislocations activation energy ram boundaries are deas of highor energy thouthe perfect lattice, refore they ve more reactive and active . "( More enerjy -less stable) SCa'!- mitraxcapi ture will '-try to elimmole it-+ at high temperatur grom bourdore) which larization electronic to a main will move faster and will try to lover its enegy- heat-treatM ....
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  • Spring '19
  • Mali
  • Crystal, Crystallographic defect, introdutee stram

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