HW7_Solutions

HW7_Solutions - Homework Solutions ECE302 Spring 2007 HW 7 1 4.30 V DS> V GS V TN so the transistor is saturated a I D = K n 2 V GS V TN 29 2 1 l

Info iconThis preview shows pages 1–3. Sign up to view the full content.

View Full Document Right Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: Homework Solutions ECE302 Spring 2007 HW 7 1 4.30 V DS > V GS- V TN so the transistor is saturated. ( a ) I D = K n 2 V GS- V TN ( 29 2 1 + l V DS ( 29 = 500 2 m A V 2 4- 1 ( 29 2 1 + 0.02 5 ( 29 ( 29 = 2.48 mA ( b ) I D = K n 2 V GS- V TN ( 29 2 = 500 2 m A V 2 4- 1 ( 29 2 = 2.25 mA 4.42 ( a ) V TN = 1.5 + 0.5 4 + 0.75- 0.75 ( 29 = 2.16 V | V GS < V TN ⇒ Cutoff & I D = ( b ) I D = 0. The result is independent of V DS . 4.67 a ( 29 C ox " = e ox T ox = 3.9 ( 29 8.854 x 10- 14 F cm 5 x 10- 6 cm = 6.906 x 10- 8 F cm 2 C GC = C ox " WL = 6.906 x 10- 8 F cm 2 20 x 10- 4 cm ( 29 2 x 10- 4 cm ( 29 = 27.6 fF ( b ) C ox " = 1.73 x 10- 7 F cm 2 | C GC = 69.1 fF ( c ) C ox " = 3.45 x 10- 7 F cm 2 | C GC = 138 fF ( d ) C ox " = 7.90 x 10- 7 F cm 2 | C GC = 276 fF Homework Solutions ECE302 Spring 2007 HW 7 2 4.83 6 5 4 3 2 1 200 400 600 800 Drain Voltage (V) Drain Current (uA) 2 V 3 V 4 V 5 V Q-point (4.84) Q-point (4.83) V GS = V DD 2 = 3 V | 6 =10...
View Full Document

This note was uploaded on 03/30/2008 for the course ECE 302 taught by Professor Barlage during the Spring '07 term at N.C. State.

Page1 / 3

HW7_Solutions - Homework Solutions ECE302 Spring 2007 HW 7 1 4.30 V DS> V GS V TN so the transistor is saturated a I D = K n 2 V GS V TN 29 2 1 l

This preview shows document pages 1 - 3. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online