Homework 2 - Jacob Sutker Nanotechnology September 19, 2006...

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Jacob Sutker Nanotechnology September 19, 2006 Homework #2 1) a) b) When a forward bias is acting upon the junction, electrons move across the junction to the p-type substance and recombine with the positively charged holes. Similarly, other holes move across the junction to the n-type substance and recombine with negatively charged electrons. c) The shape of the bands is very important in determining the electron flow in a forward biased p-n junction, especially when there is a change in temperature. The less “downhill” the bands are, the less energy, either through an applied voltage or heat is required to cause recombination of the electrons and holes. Therefore an increase in temperature will cause more heat, and an increase in electron flow during forward bias will occur. 2. In a MOSFET SiO 2 is used as a protective insulating layer and a gate oxide. Silicon Dioxide is an insulating layer between the silicon and the gate. It allows for the passage of electrons through the gate channel without dispersing or actually reaching the gate. It
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This homework help was uploaded on 09/23/2007 for the course ENGRI 1110 taught by Professor Giannelis during the Spring '07 term at Cornell University (Engineering School).

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Homework 2 - Jacob Sutker Nanotechnology September 19, 2006...

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