NTD3055-150-D.PDF

NTD3055-150-D.PDF - NTD3055-150 NVD3055-150 Power MOSFET...

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© Semiconductor Components Industries, LLC, 2014 May, 2017 − Rev. 7 1 Publication Order Number: NTD3055−150/D NTD3055-150, NVD3055-150 Power MOSFET 9.0 A, 60 V, N−Channel DPAK/IPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Typical Applications Power Supplies Converters Power Motor Controls Bridge Circuits MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage V DSS 60 Vdc Drain−to−Gate Voltage (R GS = 10 M W ) V DGR 60 Vdc Gate−to−Source Voltage − Continuous − Non−repetitive (t p v 10 ms) V GS V GS " 20 " 30 Vdc Drain Current − Continuous @ T A = 25 ° C − Continuous @ T A = 100 ° C − Single Pulse (t p v 10 m s) I D I D I DM 9.0 3.0 27 Adc Apk Total Power Dissipation @ T A = 25 ° C Derate above 25 ° C Total Power Dissipation @ T A = 25 ° C (Note 1) Total Power Dissipation @ T A = 25 ° C (Note 2) P D 28.8 0.19 2.1 1.5 W W/ ° C W W Operating and Storage Temperature Range T J , T stg −55 to 175 ° C Single Pulse Drain−to−Source Avalanche Energy − Starting T J = 25 ° C (V DD = 25 Vdc, V GS = 10 Vdc, L = 1.0 mH, I L (pk) = 7.75 A, V DS = 60 Vdc) E AS 30 mJ Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) R q JC R q JA R q JA 5.2 71.4 100 ° C/W Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds T L 260 ° C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 0.5 sq in pad size. 2. When surface mounted to an FR4 board using minimum recommended pad size. * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. 9.0 AMPERES, 60 VOLTS R DS(on) = 122 m W (Typ) N−Channel D S G 1 Gate 3 Source 2 Drain 4 Drain DPAK CASE 369C (SURFACE MOUNT) STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENTS 1 2 3 4 1 Gate 3 Source 2 Drain 4 Drain IPAK CASE 369D (STRAIGHT LEAD) STYLE 2 1 2 3 4 See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION AYWW 3150G AYWW 3150G A = Assembly Location* 3150 = Device Code Y = Year WW = Work Week G = Pb−Free Package
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NTD3055−150, NVD3055−150 2 ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) (V GS = 0 Vdc, I D = 250 m Adc) Temperature Coefficient (Positive) V (BR)DSS 60 70.2 Vdc mV/ ° C Zero Gate Voltage Drain Current (V DS = 60 Vdc, V GS = 0 Vdc) (V DS = 60 Vdc, V GS = 0 Vdc, T J = 150 ° C) I DSS 1.0 10 m Adc Gate−Body Leakage Current (V
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