EE2403 Exam 2 Solutions.pdf - Exam 2 Solutions 1 R1 and R2 do not control the current in this circuit Only VGS controls the current only the W/L differ

EE2403 Exam 2 Solutions.pdf - Exam 2 Solutions 1 R1 and R2...

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Exam 2 Solutions 1. R 1 and R 2 do not control the current in this circuit. Only V GS controls the current. only the W/L differ in the two transistors. Since W/L is 3 times larger for Q 2 , I D2 = 3 · 2 = 6 mA. For exam2b I D2 = 30 / 18 · 6 = 10 mA. 2. The inversion layer under the gate is formed for NMOS when a positive voltage on the gate drives the mobile positive charge out of the p-type material in the gate region and attracts mobile negative charge into the gate region. 3. The base transport factor, α T , is the ratio of the number of electrons injected into the base to the number injected into the collector. For exam2b, The emitter efficiency is the ratio of the electron current to the sum of the electron plus hole current passing through the emitter-base junction of an npn transistor. 4. Assume the transistor is operating in the saturation region. Part a. I D = μ n C ox W 2 L ( V GS V t ) 2 The gate voltage is the voltage divider:
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  • Fall '13
  • Electron, Electric charge, Bipolar junction transistor, µn Cox

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