2N5088-9.pdf - 2N5088 MMBT5088 2N5089 MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark 1Q 1R NPN General Purpose Amplifier This

2N5088-9.pdf - 2N5088 MMBT5088 2N5089 MMBT5089 2N5088...

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2N5088 2N5089 MMBT5088 MMBT5089 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 µ A to 50 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V CEO Collector-Emitter Voltage 2N5088 2N5089 30 25 V V V CBO Collector-Base Voltage 2N5088 2N5089 35 30 V V V EBO Emitter-Base Voltage 4.5 V I C Collector Current - Continuous 100 mA T J , T stg Operating and Storage Junction Temperature Range -55 to +150 ° C NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N5088 2N5089 *MMBT5088 *MMBT5089 P D Total Device Dissipation Derate above 25 ° C 625 5.0 350 2.8 mW mW/ ° C R θ JC Thermal Resistance, Junction to Case 83.3 ° C/W R θ JA Thermal Resistance, Junction to Ambient 200 357 ° C/W C B E TO-92 C B E SOT-23 Mark: 1Q / 1R * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088/2N5089/MMBT5088/MMBT5089, Rev A
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