For students MS3012_MD_lydia(Review of Semicon Physics).pptx - MS3012 MICRO/NANOELECTRONICS Review of Semiconductor Physics Prof Lydia Helena Wong

For students MS3012_MD_lydia(Review of Semicon...

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Content Copyright Nanyang Technological University 1 MS3012 MICRO/NANOELECTRONICS Review of Semiconductor Physics Prof. Lydia Helena Wong College of Engineering School of Materials Science and Engineering
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Content Copyright Nanyang Technological University 2 LEARNING OBJECTIVES To understand the concept of intrinsic carrier concentration in semiconductors and its effect with temperature To understand the concept of doping in Silicon in terms of electronic band structure and atomic arrangements. To correlate carrier concentration and resistivity/conductivity To understand the factors affecting carrier mobility : i.e. Temperature, carrier concentration
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Content Copyright Nanyang Technological University 3 WHY SILICON? a. Si is abundant in the form of silica (sand) b. Availability of simple techniques to refine and grow single Si crystals c. Si is an elemental semiconductor d. Si has a wider energy band gap, leading to its operation at higher temperature, i.e. >150°C compared to 100°C for Ge e. Good thermally grown SiO 2 for Si/SiO 2 interface of MOS devices More than 95% of semiconductor devices are Si -based.
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Content Copyright Nanyang Technological University 4 SI SEMICONDUCTOR Group IV intrinsic semiconductors 4 valence electrons Silicon Atom, Atomic number = 14 Silicon atom showing 4 electrons in its outer valence shell (m)
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Content Copyright Nanyang Technological University 5 SI CRYSTAL STRUCTURE Coordination number = 4 a = 5.43Å Distance between 2 neighbouring atoms = = 2.35Å Radius of Si atom = 1.18Å Packing density = 34% Diamond lattice Diamond lattice sub-cell 0 . 0 . 0
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