Hw4.ece3813.ThaiLe.pdf - THAI 4 HW 3813 ECE LE ① A NMOSFET is fabricated with L=100 nm W=2 μm the process technology is specified to have tox= 5 nm

# Hw4.ece3813.ThaiLe.pdf - THAI 4 HW 3813 ECE LE ① A...

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A NMOSFET is fabricated with L=100 nm W=2 μ m, the process technology is specified to have tox= 5 nm, μ n = 400 cm2/vs , and Vtn = 0.4 V (note: ε ox = 3.45 × 10-11 F/m). Find Cox, kn and kn Find VOV, VGS and the minimum value of VDS required to operate the transistor in saturation at a current ID = 27.6 μ A? ECE 3813 HW 4 THAI LE . - 11 Eax 3.45×10 " Cox = fax = Fg , = 69×10-4 CFI m2 ) . Kur = junco , = l 400×10-4/169 x no 276 x no 6 ( Alvy kn Kix E = (272×10-91470) = 552 a ios ( Alr ' ) - " I D= fkn Viv V.v = an = ¥-6 a lo - f 552×75=0.1 V Vo = Vars Vtn 7 Vcrs = Vert Vtn = o I t O 4 = 0.5 V V = 0.5 V G- S VDS min = Vor = a IV

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A NMOSFET having the process transconductance parameter kn’ = 400 μ A/V2. When it is placed in a circuit as shown below with I=20 μ A, the voltage across the device VDS = 0.6 V, when I increases to 80 μ A, the voltage increases to 0.7 V, Find Vt and W/L of the transistor. (Ignore channel-length modulation e ff ect) Ver - Vrs this VDS } Vps 7 Vow V Vai Vcrs - Vt The operation mode is in saturation zone I D= fkn Voi - - I hi E ( Vos - 45 Ip , = fkn ' E ( Vos , - Vt ) ' in !
• Fall '17
• Yan (Rockee) Zhang

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