2006Spring-Midterm1

2006Spring-Midterm1 - University of California at Berkeley...

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1 University of California at Berkeley College of Engineering Dept. of Electrical Engineering and Computer Sciences EE 105 Midterm I Spring 2006 Prof. Ming C. Wu Feb. 23, 2006 Guidelines Closed book and notes. One-page information sheet allowed. There are some useful formulas in the end of the exam. The values of common parameters are listed at the beginning of next page.
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2 Please use the following parameters for all problems unless specified otherwise: φ n+ = 550 mV, φ p+ = -550 mV, V th = 26 mV ε Si = 11.7, ε SiO2 = 3.9, ε 0 = 8.854 × 10 -14 F/cm, q = 1.6x10 -19 C, n i = 10 10 cm -3 . (1) Consider a silicon PN junction diode with an N-doping concentration of 10 16 cm -3 and a P-doping concentration of 10 18 cm -3 . Their cross-sectional area of the diode is 100 μ m 2 . Assume the reverse saturation current of the diode is 10 -14 Amp. The diode is forward biased at 0.7V. a) [10 pt] Find the dynamic resistance at this bias. b) [10 pt] Find the depletion capacitance at this bias.
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This note was uploaded on 04/01/2008 for the course EECS 105 taught by Professor Mingwu during the Spring '06 term at Berkeley.

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2006Spring-Midterm1 - University of California at Berkeley...

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