Homework1 - 3. Given an n-type ion-implanted layer with...

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UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Dept. of Electrical Engineering and Computer Sciences Problem Set #1 Due Tuesday, January 31, 2006. EE 105 Spring 2006 1. A sample of silicon is doped with N d = 1.1x10 13 cm -3 and N a = 1x10 13 cm -3 . a) Which carrier is the majority carrier? b) What type is the silicon (n or p)? c) Find the electron and hole concentration at room temperature. 2. A sample of silicon is doped with N d = 2x10 16 cm -3 . a) What is the electron concentration and mobility? b) We want to dope to the electron concentration of 1x10 16 cm -3 . What is the additional dopant type and concentration? What is the new electron mobility?
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Unformatted text preview: 3. Given an n-type ion-implanted layer with thickness t = 1 m and average doping concentration N d = 10 17 cm-3 . a) What is the sheet resistance? b) What is the resistance of the layout shown below? (Assume that the contact regions each contribute 0.65 squares.) c) By adding additional dopants, we make a new n-type ion-implanted resistor with an average doping concentration N d 1 = 2x10 17 cm-3 over the depth 0 < x < 0.25 m and N d 2 = 10 17 cm-3 over the depth 0.25 m < x < 1 m. Find the new sheet resistance....
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