**Unformatted text preview: **3. Given an n-type ion-implanted layer with thickness t = 1 μ m and average doping concentration N d = 10 17 cm-3 . a) What is the sheet resistance? b) What is the resistance of the layout shown below? (Assume that the contact regions each contribute 0.65 squares.) c) By adding additional dopants, we make a new n-type ion-implanted resistor with an average doping concentration N d 1 = 2x10 17 cm-3 over the depth 0 < x < 0.25 μ m and N d 2 = 10 17 cm-3 over the depth 0.25 μ m < x < 1 μ m. Find the new sheet resistance....

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- Spring '06
- MingWu
- Computer Science, Electrical Engineering, Extrinsic semiconductor, electron concentration, average doping concentration, BERKELEY College of Engineering Dept. of Electrical Engineering and Computer Sciences