EECS
Homework3

# Homework3 - UNIVERSITY OF CALIFORNIA AT BERKELEY College of...

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UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Dept. of Electrical Engineering and Computer Sciences Problem Set #3 Due Tuesday, February 14, 2006. EE 105 Spring 2006 1. The charge distribution in an IC structure is shown in Fig. 1. a. Find the numerical value of the surface charge Q so that the total charge is zero in the structure. Note that the units of Q are C/cm 2 . b. Plot the electric field E(x) through the structure. c. Sketch the potential φ (x), given that the potential

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Unformatted text preview: φ (+/-3000) = 0. Figure 1. 2. Fig. 2 shows a circuit for charging a 12V battery. Assume that the forward conducting diode exhibits a constant voltage drop Vd=0.7V. a. If vs is a sinusoid with 24V peak amplitude, find the fraction of each cycle during which the diode conducts. b. Find the peak value of the diode current and the maximum reverse-bias voltage that appears across the diode. Figure 2. 3. A MOS capacitor has an n+ polysilicon gate, a 450 Angstrom thick gate oxide, and an n-type substrate with donor concentration Nd=7.5x10 16 cm-3 . a. If the gate charge is Qg = 2x10-7 C/cm 2 , sketch the charge density through the MOS capacitor. b. For the gate charge in part a), what is the gate-bulk bias V GB ?...
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• Spring '06
• MingWu
• Computer Science, Electrical Engineering, Electric charge, Fundamental physics concepts, n+ polysilicon gate, Gate Charge, BERKELEY College of Engineering Dept. of Electrical Engineering and Computer Sciences, forward conducting diode

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