HW4 - gate oxide thickness T OX =34.5nm Please calculate a...

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UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Dept. of Electrical Engineering and Computer Sciences Problem Set # 4 Due Tuesday, February 21 2005. EE 105 Spring 2006 1 Consider a MOS-cap with p+ gate and n-substrate. Substrate doping Nd=3.3E17. The gate oxide thickness T OX =34.5nm. Please calculate: a) Flat band voltage V FB b) Threshold voltage V Tn c) Capacitance at V GB =2V, 0V, -2V, -4V 2 Consider a MOS-cap with n+ gate and p-substrate. Substrate doping Na=7E15. The
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Unformatted text preview: gate oxide thickness T OX =34.5nm. Please calculate: a) Flat band voltage V FB b) Threshold voltage V Tp c) Capacitance at V GB =1V, 0V, -1V, -2V 3 ． For the MOS-cap in problem 1, please plot the charge density as a function of position x under gate voltage VGB=-2V, -4V. Mark the values of all the breaking points....
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