Hw10 - gs and C gd of the NMOS device c Repeat b using the...

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UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Dept. of Electrical Engineering and Computer Sciences Problem Set #10 Due Tuesday, April 25 th , 2006. EE 105 Spring 2006 1. You are given an NMOS common-source voltage amplifier with a current source supply with I sup =50 μ A and r oc . The NMOS device has a W/L=50/2. The source resistance, Rs=10k Ω and the load resistance R L . Assume that all the devices are operating in their constant-current region. Use the following values: μ n Cox=50 μ A/V2 λ n=0.05 V -1 . Cov=0.5fF/ μ m, Cox=2.3fF/ μ m 2 . a. Calculate the open-circuit voltage gain at low frequency. b. Calculate ω 3dB using the Miller Approximation and considering only C
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Unformatted text preview: gs and C gd of the NMOS device. c. Repeat b. using the open circuit time constant method. 2. You are given an PMOS common-drain amplifier with a current source supply with I sup =100 μ A and r oc ∞ . Use the following values: μ p Cox=50 μ A/V2 λ p=0 V-1 . L=2 μ m. Cox=1fF/um 2 . Cov=3x10-3 fF/um. Find the smallest W/L necessary to have a low frequency voltage gain greater or equal to 0.3 and ω 3dB greater or equal to 100Mrad/s when a. Rs=1k Ω and R L =500 Ω b. Rs=10k Ω and R L =1k Ω c. Rs=5k Ω and R L =250 Ω 3. This exercise compares a CS-CS voltage amplifier with a CS-CD voltage amplifier. If you are given that the g m of the MOS devices is 1mS and r o is 100k Ω , which topology yields the highest overall voltage gain, given: a) Rs = 1k Ω and R L = 100 Ω b) Rs = 1k Ω and R L = 10k Ω c) Repeat a) and b) when g m = 100 μ S and r o = 10M Ω ....
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