lecture2 - EECS 312 1 Lecture 2: MOSFET Review EECS 312...

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Unformatted text preview: EECS 312 1 Lecture 2: MOSFET Review EECS 312 Reading: Section 3.3 EECS 312 2 Lecture Outline MOSFETs are the dominant device technology today Advantages: Dense, low power, cheap Go over I-V characteristics and capacitances EECS 320 Review (and more) EECS 312 3 The MOS Transistor CROSS-SECTION of NMOS Transistor Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Polysilicon Aluminum EECS 312 4 Cross-Section of CMOS Technology NMOS PMOS EECS 312 5 Modern CMOS Cross-Section Photos courtesy Intel, IBM Transistors are tiny compared to the wires nowadays And the devices look more and more unusual EECS 312 6 MOS transistors Types and Symbols D S G D S G G S D D S G B Usually not drawn, assume to be held to Vdd/GND This type of device has V th < 0 (default on device), not very useful EECS 312 7 Threshold Voltage: Concept n+ n+ p-substrate D S G B V GS +- Depletion Region n-channel V th definition (in words): V gs required to invert the silicon surface and create a conductive path between source and drain EECS 312 8 The Threshold Voltage V th is primarily a function of: 1) Doping in channel 2) Oxide thickness Larger doping = larger Vth Larger oxide thickness = larger Vth EECS 312 9 Body Bias Impact on V th When MOS body potential is different than source voltage body bias (V bs ) Is this important for digital circuits?...
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lecture2 - EECS 312 1 Lecture 2: MOSFET Review EECS 312...

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