lecture13 - Lecture 13 Sequential Elements EECS 312 Reading...

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10/23/03 EECS 312 1 Lecture 13: Sequential Elements EECS 312 Reading: 7.1.1, 7.2-7.3.1 Exclude 7.2.4
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Last Time 10/23/03 EECS 312 2 Static power consumption – Caused by reduced Vdd and Vth (full scaling) – High static power can be tolerated in high switching activity applications – In these cases, reduce both Vdd and Vth as much as possible to limit dynamic power Sequential element introduction – Store data based on positive feedback or capacitive charge storage – Register and latch definitions
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