lecture23 - Lecture 23: Bipolar/BiCMOS EECS 312 Review...

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EECS 312 1 Lecture 23: Bipolar/BiCMOS EECS 312 Review Addendums A and B on bwrc.eecs.berkeley.edu/ICbook/AdditionalMaterial
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Lecture Overview EECS 312 2 • Bipolar transistor overview • BiCMOS logic – Inverter operation – Applications
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Bipolar Transistor EECS 312 3 n-epitaxy p-substrate n + buried layer p + isolation n + p + p n + EB C p + EC B n + pn (a) Cross-sectional view. (b) Idealized transistor structure.
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Schematic Symbols and Sign Conventions EECS 312 4 C E B I B I E I C + + + V BC V BE V CE C E B I B I E I C + + + V V V CE (a) npn (b) pnp NPN, like NMOS devices, are faster due to enhanced diffusivity of electrons through the p-type base
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Bipolar Transistor Operation EECS 312 5 Very large currents possible due to large current gain from base to collector (~100) Large current density Æ also large power density! Need V be > V be (on) to turn the device on – Similar to MOSFET Vth 0.0 2.0 V CE (V) 0 5 10 15 I C (m A) I B =100 µ A I B =75 µ A I B =50 µ A I B =25 µ A Forward Operation Active Saturation
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Bipolar Logic Overview EECS 312 6
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This note was uploaded on 04/01/2008 for the course EECS 312 taught by Professor Maharbiz during the Fall '07 term at University of Michigan.

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lecture23 - Lecture 23: Bipolar/BiCMOS EECS 312 Review...

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