Unformatted text preview: UNIVERSITY OF CALIFORNIA AT BERKELEY EECS Department EECS 40, Spring 2007 Prof. Chang-Hasnain Homework #10
Due at 6 pm in 240 Cory on Wednesday, 04/18/07 Total Points: 100 Put (1) your name and (2) discussion section number on your homework. You need to put down all the derivation steps to obtain full credits of the problems. Numerical answers alone will at best receive low percentage partial credits. No late submission will be accepted expect those with prior approval from Prof. Chang-Hasnain. 1. 2. 3. 4. 5. 6. 7. Hambley, P10.46 Hambley, P10.48 Hambley, P10.52 Hambley, P10.55 Hambley, P10.57 Hambley, P10.60 Consider the following circuit: Use the 0.7 model for all the diodes, and let R2=2R1. Sketch the voltage transfer characteristic (vo vs vin) for vin ranging from -5V to +5V Page 1 of 3 UNIVERSITY OF CALIFORNIA AT BERKELEY EECS Department 8. Diode Logic: In this problem, we will compare 2 implementations in diode logic of the same logic function. Vcc Vcc Vcc R R R A B C F A B C F (a) What is the logic function performed by these circuits? (b) Now let Vcc = 3V, R = 100k, and use the 0.7V model for the diodes. When all three inputs are low (0V), what is Vout (the voltage at F) for each circuit? (c) Using the same values, what is the power dissipated in each circuit. (d) Which circuit is better, and why? 9. Diode + Op-Amp: Consider the following circuit: Use the 0.7V model for the diode. (a) What is vOUT(t) as a function of vIN(t) when the diode is on? (b) What is vOUT(t) as a function of vIN(t) when the diode is off? (c) For what values of vIN(t) is the diode on? (d) Let vIN(t) be a 50 Hz triangle wave with Vpp = 20V. Suppose the capacitor is initially uncharged. Plot vOUT(t) for 0 < t < 60 ms. Page 2 of 3 UNIVERSITY OF CALIFORNIA AT BERKELEY EECS Department 10. Doping: Identify the majority carrier and find the electron and hole concentrations at room temperature in the following semiconductors: (a) Silicon doped with phosphorus with a concentration of 1015cm-3. (b) Silicon doped with both arsenic with a concentration of 5x1017cm-3 and boron with a concentration of 5.5x1017cm-3. (c) Silicon doped with three impurities: arsenic with a concentration of 1016cm-3, boron with a concentration of 1.15x1016cm-3, and phosphorus with a concentration of 2.5x1015cm-3. Page 3 of 3 ...
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This homework help was uploaded on 04/02/2008 for the course EE 40 taught by Professor Chang-hasnain during the Spring '07 term at Berkeley.
- Spring '07