Homework11

# Homework11 - UNIVERSITY OF CALIFORNIA AT BERKELEY EECS...

This preview shows pages 1–2. Sign up to view the full content.

UNIVERSITY OF CALIFORNIA AT BERKELEY EECS Department Page 1 of 4 EECS 40/42/100, Spring 2007 Prof. Chang-Hasnain Homework #11 Due at 6 pm in 240 Cory on Wednesday, 04/25/07 Total Points: 100 Put (1) your name and (2) discussion section number on your homework. You need to put down all the derivation steps to obtain full credits of the problems. Numerical answers alone will at best receive low percentage partial credits. No late submission will be accepted expect those with prior approval from Prof. Chang-Hasnain. *Note: Power gain is defined as the ratio between power to a load and power from an input source. 1. (10pts) Consider a Ge material at T-300K. Calculate the concentrations of electrons and holes for Nd=5x10^15 cm-3, Na=0 (For Ge, bandgap= 0.66eV, Nc=1.04x10^19cm-3, Nv=6x10^18cm-3) Hint: refer to Sec. 3.1.3 of the course reading 2. (10pts) Consider a uniformly doped GaAs PN junction at T=300K. At zero bias, 20% of the depletion region falls in the p-type semiconductor and 80% of the depletion

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
This is the end of the preview. Sign up to access the rest of the document.

## This homework help was uploaded on 04/02/2008 for the course EE 40 taught by Professor Chang-hasnain during the Spring '07 term at Berkeley.

### Page1 / 4

Homework11 - UNIVERSITY OF CALIFORNIA AT BERKELEY EECS...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document
Ask a homework question - tutors are online