Homework11

Homework11 - UNIVERSITY OF CALIFORNIA AT BERKELEY EECS...

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UNIVERSITY OF CALIFORNIA AT BERKELEY EECS Department Page 1 of 4 EECS 40/42/100, Spring 2007 Prof. Chang-Hasnain Homework #11 Due at 6 pm in 240 Cory on Wednesday, 04/25/07 Total Points: 100 Put (1) your name and (2) discussion section number on your homework. You need to put down all the derivation steps to obtain full credits of the problems. Numerical answers alone will at best receive low percentage partial credits. No late submission will be accepted expect those with prior approval from Prof. Chang-Hasnain. *Note: Power gain is defined as the ratio between power to a load and power from an input source. 1. (10pts) Consider a Ge material at T-300K. Calculate the concentrations of electrons and holes for Nd=5x10^15 cm-3, Na=0 (For Ge, bandgap= 0.66eV, Nc=1.04x10^19cm-3, Nv=6x10^18cm-3) Hint: refer to Sec. 3.1.3 of the course reading 2. (10pts) Consider a uniformly doped GaAs PN junction at T=300K. At zero bias, 20% of the depletion region falls in the p-type semiconductor and 80% of the depletion
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Homework11 - UNIVERSITY OF CALIFORNIA AT BERKELEY EECS...

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