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UNIVERSITY OF CALIFORNIA AT BERKELEY
EECS Department
Page 1 of 4
EECS 40/42/100, Spring 2007
Prof. ChangHasnain
Homework #11
Due at 6 pm in 240 Cory on Wednesday, 04/25/07
Total Points: 100
•
Put (1) your name and (2)
discussion
section number
on your homework.
•
You need to put down all the derivation steps to obtain full credits of the problems.
Numerical answers alone will at best receive low percentage partial credits.
•
No late submission will be accepted expect those with prior approval from Prof.
ChangHasnain.
•
*Note: Power gain is defined as the ratio between power to a load and power from
an input source.
1.
(10pts)
Consider a Ge material at T300K. Calculate the concentrations of electrons
and holes for Nd=5x10^15 cm3, Na=0
(For Ge, bandgap= 0.66eV, Nc=1.04x10^19cm3, Nv=6x10^18cm3)
Hint: refer to Sec. 3.1.3 of the course reading
2.
(10pts)
Consider a uniformly doped GaAs PN junction at T=300K. At zero bias, 20%
of the depletion region falls in the ptype semiconductor and 80% of the depletion
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 Spring '07
 ChangHasnain

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