hw10_soln - UNIVERSITY OF CALIFORNIA AT BERKELEY College of...

Info iconThis preview shows pages 1–2. Sign up to view the full content.

View Full Document Right Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences Homework #10 Solutions Due Tuesday, November 6, 2007 EE 105 Fall 2007 Prof. Liu Problem 1. MOSFET Body Effect a) V TH = V TH + parenleftBig radicalbig 2 B + V SB radicalbig 2 B parenrightBig V TH = 0 . 5 V V TH = V FB + 2 B + 1 C ox radicalbig 2 q s N A 2 B B = (60 mV)log ( N A /n i ) = 480 mV C ox = ox /t ox = 1 . 38 F / cm 2 V TH = 0 . 362 V = 1 C ox radicalbig 2 qN A s = 0 . 410 V SB = . 773 V b) Reverse biasing the body-source PN junction would increase the short-channel effect. By reverse biasing the body-source junction, the reverse-bias on the body-drain junction is also increased. Thus, reverse body biasing exacerbates the short channel effect of | V TH | re- duction with decreasing L , because the depletion charge supported by the source and drain junctions is increased (hence the depletion charge supported by the gate is decreased signifi-...
View Full Document

Page1 / 3

hw10_soln - UNIVERSITY OF CALIFORNIA AT BERKELEY College of...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online