BEndicott_Week_2_iLab_1.docx - Lab 2 \u2013 Transistors By Benjamin Endicott ECT246 Electronic Systems III with Lab Gary House DeVry University Online Part

BEndicott_Week_2_iLab_1.docx - Lab 2 – Transistors By...

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Lab 2 – Transistors By Benjamin Endicott ECT246 Electronic Systems III with Lab Gary House DeVry University Online 5/19/14 Part A-Transistor Circuits
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TCO #2: Given an application requiring a single-stage common emitter BJT amplifier and a common source JFET amplifier with voltage-divider biasing use the device’s data sheet to establish the operating conditions calculate, simulate, and measure the input and output parameters. During week two you will be introduced to Bipolar Junction Transistors (BJTs) and Junction Field Effect Transistors (JFETs). You will learn the device’s schematic symbols, their electrical characteristics, how to create a dc bias circuit and a small signal amplifier. A. Analyze the data sheets of a BJT and determine items such as the schematic symbol, pin designation, maximum ratings, on and off electrical characteristics. a. Draw the schematic symbols of a NPN and PNP transistor and label the base, emitter and collector. b. Draw the physical packages of a 2N3904 transistor and label the base, emitter and collector leads. E= emitter, B=Base, C=Collector c. Record the maximum ratings such as collector-emitter voltage, collector-base voltage and emitter-base voltage, collector current.
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