lecture9annotat - 6.012 - Microelectronic Devices and...

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6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 9-1 Lecture 9 - MOSFET (I) MOSFET I-V Characteristics October 6, 2005 Contents : 1. MOSFET: cross-section, layout, symbols 2. Qualitative operation 3. I-V characteristics Reading assignment: Howe and Sodini, Ch. 4, §§ 4.1-4.3 Announcements: Quiz 1: 10/13, 7:30-9:30 PM, (lectures #1-9); open book; must have calculator.
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6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 9-2 Key questions How can carrier inversion be exploited to make a tran- sistor? How does a MOSFET work? How does one construct a simple first-order model for the current-voltage characteristics of a MOSFET?
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6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 9-3 1. MOSFET: layout, cross-section, symbols polysilicon gate source gate body channel p p n n p + n + n + n + p + n + n + n + n + gate length STI edge drain gate oxide inversion layer gate width Key elements: inversion layer under gate (depending on gate voltage) heavily-doped regions reach underneath gate in - version layer electrically connects source and drain 4-terminal device: body voltage important
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6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 9-4 Image removed due to copyright restrictions.
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6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 9-5 2 Circuit symbols Two complementary devices: n-channel device (n-MOSFET) on p-Si substrate (uses electron inversion layer) p-channel device (p-MOSFET) on n-Si substrate (uses hole inversion layer) D V SD > 0 V DS > 0 D D I Dn I Dn S S + + + V SG V SB _ _ G G B B G B + + B G V BS V GS _ S _ D S I Dp I Dp (a) n-channel MOSFET (b) p-channel MOSFET
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6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 9-6 2. Qualitative operation Water analogy of MOSFET: Source : water reservoir Drain : water reservoir Gate : gate between source and drain reservoirs V DS V GS I D G
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This note was uploaded on 07/20/2009 for the course ELECTRICAL 6.012 taught by Professor Prof.jesúsdelalamo during the Fall '05 term at MIT.

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lecture9annotat - 6.012 - Microelectronic Devices and...

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