00_exam2spr_sol

00_exam2spr_sol - 6.012 Electronic Devices and Circuits Answers for Exam No 2 Spring 2000(Ave = 72 s = 13 n = 123 Problem 1 a b c d p-type because

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6.012 Electronic Devices and Circuits Answers for Exam No. 2 - Spring 2000 (Ave = 72, s = 13, n = 123) Problem 1: a) p-type, because V T > V FB . b) Accumulated, because 0 < V FB . c) The surface is depleted for v GB between V FB and V T , so the range is 1 V < v GB < 3 V. d) n-channel, because we know that in general µ e > µ h , and K varies as µ/L, and thus the device with the greater µ will have the larger L. e) The ratio of the lengths matches the ratio of the mobilities, so the ratio is 2. f) i) n-channel because the device with the longer gate has the larger gate area and therefore the larger C gs . According to Part d this is the n-channel device. ii) They are similar, because C gd depends on the parasitic fringing capacitance at the drain end of the gate and this scales as W, which is the same in both. g) i) p-channel, because channel length modulation will be more important in the devcie with the shorter gate lenth, and thus the shorter device will have the greater slope in its output characteristics. ii) Transistor B, because a large Early effect, by which we mean a large slope in the output characteristics, will have a smaller Early voltage, V A .
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This note was uploaded on 07/20/2009 for the course CSAIL 6.012 taught by Professor Prof.cliftonfonstadjr. during the Fall '03 term at MIT.

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00_exam2spr_sol - 6.012 Electronic Devices and Circuits Answers for Exam No 2 Spring 2000(Ave = 72 s = 13 n = 123 Problem 1 a b c d p-type because

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