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00_fin_exam_spr - Page 1 of 12 YOUR NAME Department of...

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Page 1 of 12 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits FINAL EXAMINATION Open book. Notes: 1. Unless otherwise indicated, assume room temperature and that kT/q is 0.025 V, kT/q ln 10 = 60 mV, and n i = 10 10 cm -3 for Si. 2. This test is designed so that most parts can be worked independently of the others. 3. All of your answers and any relevant work must appear on these pages. Any additional paper you hand in will not be graded. 4. Make reasonable approximations and assumptions. State and justify any such assumptions and approximations. 5. Be certain that you have all twelve (12) pages of this exam booklet and make certain that you write your name at the top of this page as indicated. 6. You may see your final exam in Room 13-3058 beginning June 5, 2000. Grader Use Only PROBLEM 1 (out of 20 possible) PROBLEM 2 (out of 25 possible) PROBLEM 3 (out of 28 possible) PROBLEM 4 (out of 27 possible) TOTAL

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Page 2 of 12 Problem 1 - (20 points) Warm-up questions: a) A sample of silicon is known to contain 10 17 cm -3 arsenic atoms (column V) and 5 x 10 16 cm -3 boron atoms (column III). What are the thermal equilibrium hole and electron concentrations in this sample at room temperature where n i = 10 10 cm -3 ? n o = cm -3 p o = cm -3 b) A high quality long base silicon p-n diode is inadvertently irradiated in a nuclear reactor with the consequence that the minority carrier lifetimes on the n- and p- sides decrease from 10 -4 s to 10 -8 s (no other materials parameters change). How much, if at all, does the diode saturation current change? I ES (after) I ES (before) c) i) Rank order the common-emitter (CE), common-base (CB), emitter follower (EF) bipolar linear amplifier configurations in order of increasing input resistance, assuming comparable bias levels, I C : Lowest Middle Highest Explanations: ii) Rank order the common-source (CS), common-gate (CG), source follower (SF) MOSFET linear amplifier configurations in order of increasing output resistance, assuming comparable bias levels, I D : Lowest Middle Highest Explanations: Problem 1 continues on the next page.
Page 3 of 12 Problem 1 continued d) Answer in five words or less: i) CMOS is one of the fastest MOSFET logic families and it is used in the highest speed microprocessors. At the same time, one of the most important applications for CMOS is in low speed circuitry. What is CMOS's advantage for low speed applications?

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00_fin_exam_spr - Page 1 of 12 YOUR NAME Department of...

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