97_exam2fall - YOUR NAME Department of Electrical...

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YOUR NAME________________________________ Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits Exam No. 2 Notes: 1. The parts of this exam are largely independent of each other. Thus, if you can not work one part, you should go on to the next one, and keep working through the exam, coming back to any parts you skipped at the end. 2. Unless otherwise indicated, assume room temperature and that kT/q is 0.025 V. You may also approximate [(kT/q) ln 10] as 0.06 V. 3. Open book; 6.012 text and any other notes permitted. 4. All of your answers and any relevant work must appear on these pages. Any additional paper you hand in will not be graded. 5. Make reasonable approximations and assumptions. State and justify any such assumptions and approximations you do make. 6. Be careful to include the correct units with your answers when appropriate. 7. Be certain that you have all eight (8) pages of this exam booklet and make certain that you write your name at the top of this page in the space provided. 6.012 Staff Use Only PROBLEM 1 PROBLEM 2 PROBLEM 3 TOTAL
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Page 2 of 8 Problem 1 (30points) The questions of this problem require that you give some of your answers as written statements. Keep your answers brief and to the point (twenty-five words or less should suffice). (a) You have a bipolar junction transistor with a forward current gain, F , of 200 which you want to bias so that it is in its forward active region and has an incremental input resistance, r , of 5,000 Ohms. At what level should you set the quiescent collector current, and why? I C = A, because (b) Explain why having a large reverse beta, R , in a Si bipolar junction transistor is, or is not, consistent with having a large Early voltage (that is, a small base width modu- lation effect). o
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97_exam2fall - YOUR NAME Department of Electrical...

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