# lec17 - 6.012 Electronic Devices and Circuits Lecture 17...

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6.012 - Electronic Devices and Circuits Lecture 17 - Linear Amplifier Basics - Outline Announcements Handouts - Lecture Outline and Summary Web posting - Expanded Lecture 16 foil set Exam 2 - Wednesday night, November 5, Room 10-250 Review - CMOS inverters Noise Margins: when {dv OUT /dv IN | > 1, disturbance grows Gate delay: often defined as average, i.e. ( t LO-HI + t HI-LO )/2 (We leave the 2 out) Power density : PD = P ave @f max /Area (Maximum power density is what matters) Using P ave = f C L V DD 2 , and noting f max μ 1/GD, and Area μ W n L min ): PD μ m e e ox V DD (V DD - V T ) 2 /t ox L min 2 (Must reduce dimensions and voltage - Lec 25) Biasing transistors Current source biasing Transistors as current sources Current mirror current sources and sinks Linear amplifiers Performance metrics: gains (voltage, current, power) input and output resistances power dissipation bandwidth (We'll save this for later - Lec. 22) Possible amplifier connections of transistors Clif Fonstad, 10/03 Lecture 17 - Slide 1

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Linear equivalent circuits: pn diodes: g d = q|I D |/kT C d = g d t d + C dpl (V AB ) BJTs: (in FAR) g m = q|I C |/kT g p = g m / b F g o = |I C /V A | [or l |I C |] C p = g m t b + C dpl,be (V BE ) [ t b = w B 2 /2D e ] C m = C dpl,bc (V BC ) MOSFETs: (in saturation) g m = K(V GS - V T ) = (2K|I D |) 1/2 g mb = h g m [ h = { e Si qN A /2(|2 f p | - V BS )} 1/2 /C ox * ] g o = |I D /V A | [or l |I D |] C gs = (2/3) WL C ox * C gd : G-D fringing and overlap capacitance, all parasitic C sb , C gb , C db : depletion capacitances Clif Fonstad, 10/03 Lecture 17 - Slide 2 + - g p C p v p b e C m g m v p g o e c + - C gs v gs g s C gd g mb v bs g o s d g m v gs b - + v bs C sb C db C gb + - v ds g d C d b a
v DS i D g m g o Q Inc. v GS v GS = v DS (i D ) 1/2 Inc. |v BS | h V T Q v CE ln i B , ln i C b Q i B i C I C v CE i C g o Q b Inc. i

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