lec26v2 - 6.012 - Electronic Devices and Circuits Lecture...

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6.012 - Electronic Devices and Circuits Lecture 26 - The Current State-of-the-Art - Outline Announcements Handouts - Lecture Outline and Summary, Life after 6.012 Final - Monday, Dec. 15, 9:00 am to 12 noon, duPont Gymnasium Covering all the course; closed book; 4-5 excellent problems Review - Device transist times and quasi-statics Device transit times and the quasi-static assumption: BJT: t B = q n'(x)/J e = w B 2 /2D e = w B 2 /2 m e V Thermal MOSFET: t C = L/ m E = L 2 / m e (V GS -V T ) e Velocity saturation: t B = w B /s sat , t C = L/s sat (now only linear in dimension) Review - CMOS scaling The current state-of-the-art f T 's Scaling and microprocessor generations Life after 6.012 Is there any? (or: "Where does one head after taking the header?" ) Clif Fonstad, 12/03 Lecture 26 - Slide 1
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Overview of CMOS Scaling CMOS gate delay and power Three key performance metrics: (We want to reduce them all.) 2 Gate Delay = 12 n L min 2 V DD / m n (V DD - V T ) P ave @max. f µ C L V DD 2 /GD = (W n /L min ) m C ox * V DD (V DD - V T ) 2 /4 n 2 P density, max µ P ave, max /W n L min = m nx e ox V DD (V DD - V T ) 2 /4 t ox L min CMOS scaling rule Scale all dimensions and all voltages by 1/ s Results of scaling: Reducing L min , W, t ox , V DD , and V T by 1/s Results in: Density: increases by s 2 K: increases by s * C : increases by s ox Gate delay, t : decreases by 1/s P ave : decreases by 1 /s 2 P density : is unchanged Velocity saturation As L gets smaller, the fields may get bigger. (…unless we scale perfectly) When s -> s sat , then what?
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This note was uploaded on 07/20/2009 for the course CSAIL 6.012 taught by Professor Prof.cliftonfonstadjr. during the Fall '03 term at MIT.

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lec26v2 - 6.012 - Electronic Devices and Circuits Lecture...

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