ps07 - 1 MASSACHUSETTS INSTITUTE OF TECHNOLOGY Department...

Info iconThis preview shows pages 1–2. Sign up to view the full content.

View Full Document Right Arrow Icon
1 MASSACHUSETTS INSTITUTE OF TECHNOLOGY Department of Electrical Engineering and Computer Science 6.012 ELECTRONIC DEVICES AND CIRCUITS Problem Set No. 7 Issued: October 17, 2003 Due: October 24, 2003 Reading Assignments: Lecture 14 (10/21/03) - Chap. 7 (7.4.2); Chap. 8 (8.2.2, 8.2.3); Chap. 10 (10.2.2, 10.2.3) Lecture 15 (10/23/03) - Chap. 15 (15.1, 15.2) Lecture 16 (10/28/03) - Chap. 15 (15.2.4) Lecture 17 (10/30/03) - Chap. 11 (11.1, 11.2) Lecture 18 (11/4/03) - Chap. 11 (11.3 to end) Problem 1 - This problem deals with evaluating the parameters in the gradual channel model for the MOSFET. (a) Do Problem 10.2 in the course text, but use N A =1 x 10 16 cm -3 , rather than 10 17 cm -3 . In Part c, calculate the a factor with v BS = 0, before finding i D . (b) Calculate the MOSFET a factor for a device in which N Ap is 5 x 10 17 cm -3 , and the oxide thickness is 3 nm (3 x 10 -7 cm). Take e ox to be 3.5 x 10 -13 F/cm and e Si to be 10 -12 F/cm. Do this for back-to-source biases, v BS , of 0, -1, and -2 V. Problem 2 - You want to be comfortable working with depletion-mode, as well
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Image of page 2
This is the end of the preview. Sign up to access the rest of the document.

Page1 / 2

ps07 - 1 MASSACHUSETTS INSTITUTE OF TECHNOLOGY Department...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online